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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.25 trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 600 600 20 30 26 104 26 45 1.5 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-247 TO-268 300 1.13/10 Nm/lb.in. 6 4 g g Features l l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 4.5 200 TJ = 25C TJ = 125C 25 1 0.25 V V nA A mA l l Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2002 IXYS All rights reserved 98635D (6/02) IXFH 26N60Q IXFT 26N60Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 22 5100 VGS = 0 V, VDS = 25 V, f = 1 MHz 560 210 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2.0 (External), 32 80 16 150 200 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 34 80 0.35 TO-247 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC 1 2 3 TO-247 AD (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 104 1.5 250 A A V ns C A TO-268 Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS -di/dt = 100 A/s, VR = 100 V 1 10 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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