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| BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage On-state resistance Nominal load current Clamping energy VDS=60V 550m 1.4A (VIN = 5V) 550mJ SOT223 Description Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level power MOSFET intended as a general purpose switch. S D D IN Features * * * * * * * * Short circuit protection with auto restart Over-voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) High continuous current rating Note: The tab is connected to the drain pin, and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance. Load dump protection (actively protects load) Logic level input Ordering information Device BSP75GTA BSP75GTC Reel size (inches) 7 13 Tape width (mm) 12mm embossed 12mm embossed Quantity per reel 1,000 4,000 Device marking BSP75G Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com BSP75G Functional block diagram D Over voltage protection IN Over current protection Logic Over temperature protection dV/dt limitation Human body ESD protection S Applications * * * * * * Especially suited for loads with a high in-rush current such as lamps and motors. All types of resistive, inductive and capacitive loads in switching applications. C compatible power switch for 12V and 24V DC applications. Automotive rated. Replaces electromechanical relays and discrete circuits. Linear mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com BSP75G Absolute maximum ratings Parameter Continuous drain-source voltage Drain-source voltage for short circuit protection Continuous input voltage Peak input voltage Operating temperature range Storage temperature range Power dissipation at TA =25C(a) Continuous drain current @ VIN=10V; TA=25C(a) Continuous drain current @ VIN=5V; TA=25C(a) Pulsed drain current @ VIN=10V Continuous source current (body diode)(a) Pulsed source current (body diode) Unclamped single pulse inductive energy Load dump protection Electrostatic discharge (human body model) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDS(SC) VIN VIN T j, Tstg PD ID ID IDM IS IS EAS VLoadDump VESD Limit 60 36 -0.2 ... +10 -0.2 ... +20 -40 to +150 -55 to +150 2.5 1.6 1.4 5 3 5 550 80 4000 E 40/150/56 Unit V V V V C C W A A A A A mJ V V Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Symbol R JA R JA R JA Limit 50 24 208 Unit C/W C/W C/W NOTES: (a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. (b) For a device surface mounted on FR4 board and measured at t<=10s. (c) For a device mounted on FR4 board with the minimum copper required for electrical connections. Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com BSP75G Characteristics Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com BSP75G Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Static characteristics Drain-source clamp voltage Off-state drain current Off-state drain current Input threshold voltage (*) Input current Input current Input current Static drain-source on-state resistance Static drain-source on-state resistance Current limit () Current limit() Dynamic characteristics Turn-on time (VIN to 90% ID) Turn-off time (VIN to 90% ID) Slew rate on (70 to 50% VDD) Slew rate off (50 to 70% VDD) Protection functions () Required input voltage for over temperature protection Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive energy Tj=25C Unclamped single pulse inductive energy Tj=150C Inverse diode Source drain voltage Symbol VDS(AZ) IDSS IDSS VIN(th) IIN IIN IIN RDS(on) RDS(on) ID(LIM) ID(LIM) ton toff -dVDS/dton Min. 60 Typ. 70 0.1 3 Max. 75 3 15 Unit V A A V Conditions ID=10mA VDS=12V, VIN=0V VDS=32V, VIN=0V VDS=VGS, ID=1mA VIN=+5V VIN=+7V VIN=+10V VIN=+5V, ID=0.7A VIN=+10V, ID=0.7A VIN=+5V, VDS>5V VIN=+10V, VDS>5V RL=22 , VDD=12V, VIN=0 to +10V RL=22 , VDD=12V, VIN=+10V to 0V RL=22 , VDD=12V, VIN=0 to +10V RL=22 , VDD=12V, VIN=+10V to 0V 1 2.1 0.7 1.5 4 520 385 1.2 2.7 7 675 550 1.75 4 10 20 20 10 mA mA mA m m A A s s V/ s V/ s 0.7 2 1.1 3 2.2 13 10 3.2 dVDS/dtoff VPROT TJT 4.5 150 175 10 V C C mJ mJ ID(ISO)=0.7A, VDD=32V ID(ISO)=0.7A, VDD=32V EAS EAS 550 200 VSD 1 VIN=0V, -ID=1.4A NOTES: (*) Protection features may operate outside spec for VIN<4.5V. () The drain current is limited to a reduced value when VDS exceeds a safe level. () Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com BSP75G Characteristics Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com BSP75G Intentionally left blank Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 7 www.zetex.com BSP75G Package outline - SOT223 Dim. A A1 b b2 C D Millimeters Min. 0.02 0.66 2.90 0.23 6.30 Max. 1.80 0.10 0.84 3.10 0.33 6.70 - Inches Min. 0.0008 0.026 0.114 0.009 0.248 Max. 0.071 0.004 0.033 0.122 0.013 0.264 Dim. e e1 E E1 L - Millimeters Min. Max. 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 - Inches Min. Max. 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 4 - May 2006 (c) Zetex Semiconductors plc 2006 8 www.zetex.com |
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