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| Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 0.40.08 0.50.08 1.50.1 3.00.15 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 150 150 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC-62 Mini Power Type Package Marking symbol : 2E Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 75V, IE = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA IC = 500mA, IB = 25mA*2 IC = 500mA, IB = 25mA*2 VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 150 150 5 120 40 0.11 0.8 90 12 *2 min typ max 0.1 Unit A V V V 340 0.3 1.2 MHz 20 pF Pulse measurement Rank classification Rank hFE1 R 120 ~ 240 2ER S 170 ~ 340 2ES Marking Symbol 2.50.1 +0.25 V V 1 Transistor PC -- Ta 1.4 2SD2459 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 1200 Ta=25C 1000 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=100C 25C -25C VCE(sat) -- IC IC/IB=20 Collector power dissipation PC (W) 1.2 1.0 Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 800 IB=8mA 7mA 6mA 5mA 0.8 600 4mA 400 3mA 2mA 200 1mA 0 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=20 500 VCE=2V 200 fT -- I E Ta=25C VCB=10V 160 Base to emitter saturation voltage VBE(sat) (V) 400 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 100C 300 Ta=100C 200 25C -25C 100 Transition frequency fT (MHz) 0.3 1 3 10 30 Forward current transfer ratio hFE 120 80 40 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob -- VCB 60 Collector output capacitance Cob (pF) 50 Ta=25C f=1MHz IE=0 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 2 |
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