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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0770 Features * Cascadable 50 Gain Block * Low Operating Voltage: 4.0 V Typical Vd * 3 dB Bandwidth: DC to 2.5 GHz * 13.0 dB Typical Gain at 1.0 GHz * Unconditionally Stable (k>1) * Hermetic, Gold-ceramic Microstrip Package high reliability package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package Description The MSA-0770 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 4.0 V 2 5965-9592E 6-398 MSA-0770 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 275 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 130C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.7 mW/C for TC > 164C. 4. Ths small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 22 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.5 GHz f = 0.1 to 2.5 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 1.5 GHz Units dB dB GHz Min. 12.5 Typ. 13.5 0.6 2.5 2.0:1 1.6:1 Max. 14.5 1.0 dB dBm dBm psec V mV/C 3.6 4.5 5.5 19.0 130 4.0 -7.0 4.4 Note: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. 6-399 MSA-0770 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 22 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .04 .05 .06 .08 .10 .12 .20 .30 .37 .42 .46 .47 .47 .51 -7 -11 -24 -38 -48 -58 -82 -107 -123 -140 -154 -167 163 131 13.5 13.5 13.4 13.4 13.2 13.0 12.3 11.6 10.4 9.0 7.7 6.4 4.2 2.3 4.74 4.72 4.70 4.65 4.58 4.47 4.12 3.82 3.33 2.83 2.42 2.08 1.63 1.30 175 170 160 151 141 131 107 85 70 52 37 23 -1 -23 -18.6 -18.4 -18.4 -18.1 -17.8 -17.5 -16.6 -15.7 -15.3 -15.4 -15.4 -15.5 -15.5 -15.9 .118 .120 .121 .124 .133 .133 .148 .163 .171 .170 .170 .169 .167 .160 2 2 6 7 9 9 10 8 7 3 1 -4 -9 -11 .20 .19 .20 .21 .23 .23 .23 .22 .19 .20 .23 .29 .35 .38 -10 -18 -34 -50 -76 -76 -101 -116 -116 -111 -107 -107 -116 -133 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 14 Gain Flat to DC 12 10 30 40 TC = +125C TC = +25C TC = -55C 16 14 12 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz G p (dB) Id (mA) G p (dB) 8 6 4 2 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 20 10 8 10 6 0 0 1 2 3 Vd (V) 4 5 4 10 20 30 I d (mA) 40 Figure 1. Typical Power Gain vs. Frequency, Id = 22 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. G p (dB) 14 13 12 15 I d = 40 mA 12 GP 6.0 5.5 I d = 15 mA I d = 22 mA I d = 40 mA NF (dB) P1 dB (dBm) NF 6 5 4 9 6 3 4.5 0 I d = 15 mA I d = 22 mA NF (dB) 0.5 1.0 2.0 4.0 5.0 P1 dB (dBm) 6 5 4 3 -55 -25 +25 +85 P1 dB +125 -3 0.1 4.0 0.2 0.3 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) TEMPERATURE (C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=22mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-400 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .004 .002 .10 .05 .070 1.70 .495 .030 12.57 .76 .035 .89 6-401 |
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