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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1127 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS Features * * * DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN GROUNDED EMITTER CONFIGURATION DESCRIPTION: THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol PDISS Parameter Total Power Dissipation * Value 8.0 36 18 0.64 -65 to 200 200 Unit W V V A VCBO Collector-base Voltage VCEO Collector-emitter Voltage (IB=0) IC Collector Current * T STG Storage Temperature TJ Junction Temperature *At RF Conditions C C Thermal Data RTH(J-C) ) Thermal Resistance Junction-case 21.9 C/W MSC0936.PDF 10-15-98 SD1127 ELECTRICAL SPECIFICATIONS (Tcase = 25C) (Tcase 25 STATIC Symbol Bvceo Bvces Bvebo Cob HFE IC = 10 mA IC = 5 mA IE = 1 mA VCB=15V IC = 50 mA Test Conditions Min. 18 36 4.0 --5.0 Value Typ. ----------- Max. ------0.25 --- Unit V V V mA --- VCE=5V DYNAMIC Symbol Pout GP Cob f=175 MHz f=175 MHz f=1 MHz Test Conditions Min. VCE=12.5V VCE=12.5V VCE=15V IE= 0 mA 4.0 10 --- Value Typ. --12 --- Max. ----20 Unit W dB pF IMPEDANCE DATA FREQ 175 MHz PIN=0.2W ZIN() ) 4.1- j 5.6 VCE=12.5V ZCL() ) 13.5- j 20.0 MSC0936.PDF 10-15-98 SD1127 PACKAGE MECHANICAL DATA 1. Collector 2. Base 3. Emitter MSC0936.PDF 10-15-98 |
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