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K7P803611B K7P801811B
Document Title
Preliminary 256Kx36 & 512Kx18 SRAM
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
Revision History
Rev. No.
Rev. 0.0 Rev. 1.0 Rev. 2.0 Rev. 3.0 Rev. 4.0
History
- Initial Document. - Final specification release - Absolute Maximum Rating VDDQ changed from 2.825V to 2.4V. - Function Description modified - Add -HC27 part (Part Number, Idd, AC Characteristics)
Draft Date
Feb. 2001 May. 2001 Jan. 2002 Mar. 2002 Aug. 2002
Remark
Preliminary Final Final Final Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
FEATURES
* 256Kx36 or 512Kx18 Organizations. * 3.3V VDD/1.5V VDDQ (2.0V max VDDQ). * HSTL Input and Output Levels. * Differential, HSTL Clock Inputs K, K. * Synchronous Read and Write Operation * Registered Input and Registered Output * Internal Pipeline Latches to Support Late Write. * Byte Write Capability(four byte write selects, one for each 9bits) * Synchronous or Asynchronous Output Enable. * Power Down Mode via ZZ Signal. * Programmable Impedance Output Drivers. * JTAG Boundary Scan (subset of IEEE std. 1149.1). * 119(7x17)Pin Ball Grid Array Package(14mmx22mm).
Preliminary 256Kx36 & 512Kx18 SRAM
256Kx36 & 512Kx18 Synchronous Pipelined SRAM
Organization Part Number K7P803611B-HC33 256Kx36 K7P803611B-HC30 K7P803611B-HC27 K7P803611B-HC25 K7P801811B-HC33 512Kx18 K7P801811B-HC30 K7P801811B-HC27 K7P801811B-HC25 Maximum Frequency 333MHz 300MHz 250MHz 250MHz 333MHz 300MHz 300MHz 250MHz Access Time 1.5 1.6 1.85 2.0 1.5 1.6 1.85 2.0
FUNCTIONAL BLOCK DIAGRAM
SA[0:17] or [0:18] Clock Buffer Write Address Register 18 or 19 18 or 19 Read Address Register 2:1 MUX Dec. Data Out 36 or 18 S/A Array 36 or 18 36 or 18 MUX0 36 or 18 WAY SS SW ZZ G Internal Clock Generator OE 36 or 18 Control Register Control Logic E Data In Register (2 stage) 36 or 18 Memory Array 256Kx36 512Kx18
K,K
Data In 36 or 18 W/D Array
Data Out Register 36 or 18
36 or 18 XDIN
DQ
PIN DESCRIPTION
Pin Name K, K SAn DQn SS SW SWa SWb SWc SWd M1, M2 G Pin Description Differential Clocks Synchronous Address Input Bi-directional Data Bus Synchronous Select Synchronous Global Write Enable Synchronous Byte a Write Enable Synchronous Byte b Write Enable Synchronous Byte c Write Enable Synchronous Byte d Write Enable Read Protocol Mode Pins (M1=VSS, M2=VDDQ) Asynchronous Output Enable Pin Name ZZ ZQ TCK TMS TDI TDO VREF VDD VDDQ VSS NC Pin Description Asynchronous Power Down Output Driver Impedance Control JTAG Test Clock JTAG Test Mode Select JTAG Test Data Input JTAG Test Data Output HSTL Input Reference Voltage Power Supply Output Power Supply GND No Connection Aug. 2002 Rev 4.0
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K7P803611B K7P801811B
PACKAGE PIN CONFIGURATIONS(TOP VIEW)
K7P803611B(256Kx36)
1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQc8 DQc6 VDDQ DQc3 DQc1 VDDQ DQd1 DQd3 VDDQ DQd6 DQd8 NC NC VDDQ 2 SA13 NC SA12 DQc9 DQc7 DQc5 DQc4 DQc2 VDD DQd2 DQd4 DQd5 DQd7 DQd9 SA15 NC TMS 3 SA10 SA9 SA11 VSS VSS VSS SWc VSS VREF VSS SWd VSS VSS VSS M1 SA14 TDI 4 NC NC VDD ZQ SS G NC NC VDD K K SW SA0 SA1 VDD SA16 TCK
Preliminary 256Kx36 & 512Kx18 SRAM
5 SA7 SA8 SA6 VSS VSS VSS SWb VSS VREF VSS SWa VSS VSS VSS M2 SA3 TDO
6 SA4 SA17 SA5 DQb9 DQb7 DQb5 DQb4 DQb2 VDD DQa2 DQa4 DQa5 DQa7 DQa9 SA2 NC NC
7 VDDQ NC NC DQb8 DQb6 VDDQ DQb3 DQb1 VDDQ DQa1 DQa3 VDDQ DQa6 DQa8 NC ZZ VDDQ
K7P801811B(512Kx18)
1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQb1 NC VDDQ NC DQb4 VDDQ NC DQb6 VDDQ DQb8 NC NC NC VDDQ 2 SA13 NC SA12 NC DQb2 NC DQb3 NC VDD DQb5 NC DQb7 NC DQb9 SA15 SA18 TMS 3 SA10 SA9 SA11 VSS VSS VSS SWb VSS VREF VSS NC VSS VSS VSS M1 SA14 TDI 4 NC NC VDD ZQ SS G NC NC VDD K K SW SA0 SA1 VDD NC TCK 5 SA7 SA8 SA6 VSS VSS VSS NC VSS VREF VSS SWa VSS VSS VSS M2 SA3 TDO 6 SA4 SA17 SA5 DQa9 NC DQa7 NC DQa5 VDD NC DQa3 NC DQa2 NC SA2 SA16 NC 7 VDDQ NC NC NC DQa8 VDDQ DQa6 NC VDDQ DQa4 NC VDDQ NC DQa1 NC ZZ VDDQ
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
FUNCTION DESCRIPTION
Preliminary 256Kx36 & 512Kx18 SRAM
The K7P803611B and K7P801811B are 9,437,184 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 262,144 words by 36 bits for K7P803611B and 524,288 words by 18 bits for K7P801811B, fabricated using Samsung's advanced CMOS technology. Single differential HSTL level K clocks are used to initiate read/write operation and all internal operations are self-timed. At the rising edge of K clock, Addresses, Write Enables, Synchronous Select and Data Ins are registered internally. Data outs are updated from output registers at the next rising edge of K clock. An internal write data buffer allows write data to follow one cycle after addresses and controls. The package is 119(7x17) Ball Grid Array with balls on a 1.27mm pitch.
Read Operation
During read operations, addresses and controls are registered during the first rising edge of K clock and then the internal array is read between first and second edges of K clock. Data outputs are updated from output registers off the second rising edge of K clock. During consecutive read operations where the address is the same, the data output must be held constant without any glitches. This characteristic is because the SRAM will be read by devices that will operate slower than the SRAM frequency and will require multiple SRAM cycles to perform a single read operation.
Write Operation(Late Write)
During write operations, addresses and controls are registered at the first rising edge of K clock and data inputs are registered at the following rising edge of K clock. Write addresses and data inputs are stored in the data in registers until the next write operation, and only at the next write opeation are data inputs fully written into SRAM array. Byte write operation is supported using SW[a:d] and the timing of SW[a:d] is the same as the SW signal.
Bypass Read Operation
Bypass read operation occurs when the last write operation is followed by a read operation where write and read addresses are identical. For this case, data outputs are from the data in registers instead of SRAM array. Bypass read operation occurs on a byte to byte basis. If only one byte is written during a write operation but a read operation is required on the same address, a partial bypass read operation occurs since the new byte data is from the data in registers while the remaing bytes are from SRAM arry.
Sleep Mode
Sleep mode is a low power mode initiated by bringing the asynchronous ZZ pin high. During sleep mode, all other inputs are ignored and outputs are brought to a High-Impedance state. Sleep mode current and output High-Z are guaranteed after the specified sleep mode enable time. During sleep mode the memory array data content is preserved. Sleep mode must not be initiated until after all pending operations have completed, since any pending operation will not guaranteed once sleep mode is initiated. Normal operations can be resumed by bringing the ZZ pin low, but only after the specified sleep mode recovery time.
Mode Control
There are two mode control select pins (M1 and M2) used to set the proper read protocol. This SRAM supports single clock pipelined operating mode. For proper specified device operation, M1 must be connected to VSS and M2 must be connected to VDDQ. These mode pins must be set at power-up and must not change during device operation.
Programmable Impedance Output Driver
The data output driver impedance is adjusted by an external resistor, RQ, connected between ZQ pin and VSS, and is equal to RQ/5. For example, 250 resistor will give an output impedance of 50. Output driver impedance tolerance is 15% by test(10% by design) and is periodically readjusted to reflect the changes in supply voltage and temperature. Impedance updates occur early in cycles that do not activate the outputs, such as deselect cycles. They may also occur in cycles initiated with G high. In all cases impedance updates are transparent to the user and do not produce access time "push-outs" or other anomalous behavior in the SRAM. Impedance updates occur no more often than every 32 clock cycles. Clock cycles are counted whether the SRAM is selected or not and proceed regardless of the type of cycle being executed. Therefore, the user can be assured that after 33 continuous read cycles have occurred, an impedance update will occur the next time G are high at a rising edge of the K clock. There are no power up requirements for the SRAM. However, to guarantee optimum output driver impedance after power up, the SRAM needs 1024 nonread cycles. The output buffers can also be programmed in a minimum impedance configuration by connecting ZQ to VSS or VDDQ.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-down.
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
TRUTH TABLE
K X X ZZ H L L L L L L L L L G X H L L X X X X X X SS X X H L L L L L L L SW X X X H L L L L L L SWa X X X X H L H H H L SWb X X X X H H L H H L SWc X X X X H H H L H L SWd X X X X H H H H L L DQa Hi-Z Hi-Z Hi-Z
Preliminary 256Kx36 & 512Kx18 SRAM
DQb Hi-Z Hi-Z Hi-Z DQc Hi-Z Hi-Z Hi-Z DQd Hi-Z Hi-Z Hi-Z Operation Power Down Mode. No Operation Output Disabled. Output Disabled. No Operation
DOUT DOUT DOUT DOUT Read Cycle Hi-Z DIN Hi-Z Hi-Z Hi-Z DIN Hi-Z Hi-Z DIN Hi-Z Hi-Z DIN Hi-Z Hi-Z Hi-Z DIN Hi-Z DIN Hi-Z Hi-Z Hi-Z Hi-Z DIN DIN No Bytes Written Write first byte Write second byte Write third byte Write fourth byte Write all bytes
NOTE : K & K are complementary
ABSOLUTE MAXIMUM RATINGS
Parameter Core Supply Voltage Relative to VSS Output Supply Voltage Relative to VSS Voltage on any pin Relative to VSS Output Short-Circuit Current(per I/O) Storage Temperature Symbol VDD VDDQ VIN IOUT TSTR Value -0.5 to 3.9 -0.5 to 2.4 -0.5 to VDDQ+0.5 (2.4V MAX) 25 -55 to 125 Unit V V V mA C
NOTE : Power Dissipation Capability will be dependent upon package characteristics and use environment. See enclosed thermal impedance data. Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter Core Power Supply Voltage Output Power Supply Voltage Input High Level Input Low Level Input Reference Voltage Clock Input Signal Voltage Clock Input Differential Voltage Clock Input Common Mode Voltage Symbol VDD VDDQ VIH VIL VREF VIN-CLK VDIF-CLK VCM-CLK Min 3.15 1.4 VREF+0.1 -0.3 0.68 -0.3 0.1 0.68 Typ 3.3 1.5 0.75 0.75 Max 3.45 2.0 VDDQ+0.3 VREF-0.1 1.0 VDDQ+0.3 VDDQ+0.3 1.0 Unit V V V V V V V V Note
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
PIN CAPACITANCE
Parameter Input Capacitance Data Output Capacitance Symbol CIN COUT
Preliminary 256Kx36 & 512Kx18 SRAM
Test Condition VIN=0V VOUT=0V
Min -
Max 4 5
Unit pF pF
NOTE : Periodically sampled and not 100% tested.(TA=25C, f=1MHz)
DC CHARACTERISTICS
Parameter Average Power Supply Operating Current-x36 (VIN=VIH or VIL, ZZ & SS=VIL) Symbol IDD33 IDD30 IDD27 IDD25 IDD33 IDD30 IDD27 IDD25 ISBZZ ISBSS ILI ILO VOH1 VOL1 VOH2 VOL2 VOH3 VOL3 Min Max 700 620 580 550 650 570 530 500 70 200 1 1 VDDQ VDDQ/2 VDDQ 0.2 VDDQ 0.4 Unit Note
-
mA
1, 2
Average Power Supply Operating Current-x18 (VIN=VIH or VIL, ZZ & SS=VIL) Power Supply Standby Current (VIN=VIH or VIL, ZZ=VIH) Active Standby Power Supply Current (VIN=VIH or VIL, SS=VIH, ZZ=VIL) Input Leakage Current (VIN=VSS or VDDQ) Output Leakage Current (VOUT=VSS or VDDQ, DQ in High-Z) Output High Voltage(Programmable Impedance Mode) Output Low Voltage(Programmable Impedance Mode) Output High Voltage(IOH=-0.1mA) Output Low Voltage(IOL=0.1mA) Output High Voltage(IOH=-6mA) Output Low Voltage(IOL=6mA)
-
mA
1, 2
-1 -1 VDDQ/2 VSS VDDQ-0.2 VSS VDDQ-0.4 VSS
mA mA A A V V V V V V
1 1
3,5 4,5 6 6 6 6
NOTE :1. Minimum cycle. IOUT=0mA. 2. 50% read cycles. 3. |IOH|=(VDDQ/2)/(RQ/5)15% @VOH=VDDQ/2 for 175 RQ 350. 4. |IOL|=(VDDQ/2)/(RQ/5)15% @VOL=VDDQ/2 for 175 RQ 350. 5. Programmable Impedance Output Buffer Mode. The ZQ pin is connected to VSS through RQ. 6. Minimum Impedance Output Buffer Mode. The ZQ pin is connected to VSS or VDDQ.
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
Preliminary 256Kx36 & 512Kx18 SRAM
AC TEST CONDITIONS (TA=0 to 70C, VDD=3.15~3.45V, VDDQ=1.5V)
Parameter Core Power Supply Voltage Output Power Supply Voltage Input High/Low Level Input Reference Level Input Rise/Fall Time Input and Out Timing Reference Level Clock Input Timing Reference Level
NOTE : Parameters are tested with RQ=250 and VDDQ=1.5V.
Symbol VDD VDDQ VIH/VIL VREF TR/TF
Value 3.15~3.45 1.5 1.25/0.25 0.75 0.5/0.5 0.75 Cross Point
Unit V V V V ns V V
AC TEST OUTPUT LOAD
50 50 25 DQ VDDQ/2 50 50 5pF VDDQ/2 5pF VDDQ/2
AC CHARACTERISTICS
Parameter Clock Cycle Time Clock High Pulse Width Clock Low Pulse Width Clock High to Output Valid Clock High to Output Hold Address Setup Time Address Hold Time Write Data Setup Time Write Data Hold Time SW, SW[a:d] Setup Time SW, SW[a:d] Hold Time SS Setup Time SS Hold Time Clock High to Output Hi-Z Clock High to Output Low-Z G High to Output High-Z G Low to Output Low-Z G Low to Output Valid ZZ High to Power Down(Sleep Time) ZZ Low to Recovery(Wake-up Time) Symbol tKHKH tKHKL tKLKH tKHQV tKHQX tAVKH tKHAX tDVKH tKHDX tWVKH tKHWX tSVKH tKHSX tKHQZ tKHQX1 tGHQZ tGLQX tGLQV tZZE tZZR -33 Min 3.0 1.2 1.2 0.5 0.4 0.5 0.4 0.5 0.4 0.5 0.4 0.5 0.5 0.5 Max 1.5 1.5 1.5 1.5 15 20 Min 3.3 1.3 1.3 0.5 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.5 0.5 -30 Max 1.6 1.6 1.6 1.6 15 20 Min 3.65 1.5 1.5 0.5 0.4 0.7 0.4 0.7 0.4 0.7 0.4 0.7 0.5 0.5 -27 Max 1.85 1.85 1.85 1.85 15 20 Min 4.0 1.6 1.6 0.5 0.4 0.7 0.4 0.7 0.4 0.7 0.4 0.7 0.5 0.5 -25 Max 2.0 2.0 2.0 2.0 15 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
Preliminary 256Kx36 & 512Kx18 SRAM
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (SS Controlled, G=Low)
1 2 3 4 5 6 7 8
K
tKHKH tAVKH tKHAX tKHKL tKLKH
SAn
A1
tSVKH
A2
tKHSX
A3
A4
A5
A4
A6
A7
SS
tWVKH tKHWX tWVKH tKHWX
SW
tWVKH tKHWX
SWx
tKHQV tKHQZ tDVKH tKHDX tKHDX tKHQX1 tKHQX
DQn
Q1
Q2
D3
D4
Q5
Q4
NOTE 1. D3 is the input data written in memory location A3. 2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the last write cycle address.
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (G Controlled, SS=Low)
1 2 3 4 5 6 7 8
K
tKHKH
SAn
A1
A2
A3
A4
A5
A4
A6
A7
G
SW
SWx
tGHQZ tGLQV tGLQX
DQn
Q1
Q2
D3
D4
Q5
Q4
NOTE 1. D3 is the input data written in memory location A3. 2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the last write cycle address.
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
TIMING WAVEFORMS OF STANDBY CYCLES
1 2 3 4 5
Preliminary 256Kx36 & 512Kx18 SRAM
6 7 8
K
tKHKH
SAn SS SW SWx
A1
A2
A1
A2
A3
tZZE
tZZR
ZZ
tKHQV tKHQV
DQn
Q1
Q2
Q1
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
Preliminary 256Kx36 & 512Kx18 SRAM
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
The SRAM provides a limited set of IEEE standard 1149.1 JTAG functions. This is to test the connectivity during manufacturing between SRAM, printed circuit board and other components. Internal data is not driven out of SRAM under JTAG control. In conformance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP controller has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM, TCK must be tied to VSS to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the application of a logic 1, and therefore can be left unconnected. But they may also be tied to VDD through a resistor. TDO should be left unconnected.
JTAG Block Diagram
JTAG Instruction Coding
IR2 IR1 IR0 Instruction 0 0 0 0 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 TDO Output Notes 1 2 1 3 4 3 3 3 SAMPLE-Z Boundary Scan Register IDCODE Identification Register
SAMPLE-Z Boundary Scan Register BYPASS SAMPLE BYPASS BYPASS BYPASS Bypass Register Boundary Scan Register Bypass Register Bypass Register Bypass Register
SRAM CORE M1 M2
1 1 1
TDI
BYPASS Reg. Identification Reg. Instruction Reg. Control Signals
TDO
NOTE : 1. Places DQs in Hi-Z in order to sample all input data regardless of other SRAM inputs. 2. TDI is sampled as an input to the first ID register to allow for the serial shift of the external TDI data. 3. Bypass register is initiated to VSS when BYPASS instruction is invoked. The Bypass Register also holds serially loaded TDI when exiting the Shift DR states. 4. SAMPLE instruction does not places DQs in Hi-Z.
TMS TCK
TAP Controller
TAP Controller State Diagram
1 0 Test Logic Reset 0 Run Test Idle
1 1
Select DR 0 Capture DR 0 Shift DR 1 1 Exit1 DR 0 Pause DR 1 Exit2 DR 1 Update DR 0
1
Select IR 0 1 Capture IR
1
0
0 1 Shift IR 1 Exit1 IR 0 Pause IR 1 Exit2 IR 1 Update IR 1 0 0 0 0
0 0
1
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
SCAN REGISTER DEFINITION
Part 256Kx36 512Kx18 Instruction Register 3 bits 3 bits Bypass Register 1 bits 1 bits
Preliminary 256Kx36 & 512Kx18 SRAM
ID Register 32 bits 32 bits Boundary Scan 70 bits 51 bits
ID REGISTER DEFINITION
Part 256Kx36 512Kx18 Revision Number (31:28) 0000 0000 Part Configuration (27:18) 00110 00100 00111 00011 Vendor Definition (17:12) XXXXXX XXXXXX Samsung JEDEC Code (11: 1) 00001001110 00001001110 Start Bit(0) 1 1
BOUNDARY SCAN EXIT ORDER(x36)
36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 3B 2B 3A 3C 2C 2A 2D 1D 2E 1E 2F 2G 1G 2H 1H 3G 4D 4E 4G 4H 4M 3L 1K 2K 1L 2L 2M 1N 2N 1P 2P 3T 2R 4N 3R SA9 NC SA10 SA11 SA12 SA13 DQc9 DQc8 DQc7 DQc6 DQc5 DQc4 DQc3 DQc2 DQc1 SWc ZQ SS NC NC SW SWd DQd1 DQd2 DQd3 DQd4 DQd5 DQd6 DQd7 DQd8 DQd9 SA14 SA15 SA0 M1 SA8 SA17 SA7 SA6 SA5 SA4 DQb9 DQb8 DQb7 DQb6 DQb5 DQb4 DQb3 DQb2 DQb1 SWb G K K SWa DQa1 DQa2 DQa3 DQa4 DQa5 DQa6 DQa7 DQa8 DQa9 ZZ SA3 SA2 SA16 SA1 M2 5B 6B 5A 5C 6C 6A 6D 7D 6E 7E 6F 6G 7G 6H 7H 5G 4F 4K 4L 5L 7K 6K 7L 6L 6M 7N 6N 7P 6P 7T 5T 6R 4T 4P 5R 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
BOUNDARY SCAN EXIT ORDER(x18)
26 27 28 29 30 31 32 33 3B 2B 3A 3C 2C 2A 1D 2E SA9 NC SA10 SA11 SA12 SA13 DQb1 DQb2 DQa8 DQa7 34 2G DQb3 DQa6 DQa5 35 36 37 38 39 40 41 1H 3G 4D 4E 4G 4H 4M DQb4 SWb ZQ SS NC NC SW G K K SWa DQa4 4F 4K 4L 5L 7K 14 13 12 11 10 7G 6H 16 15 7E 6F 18 17 SA8 SA17 SA7 SA6 SA5 SA4 DQa9 5B 6B 5A 5C 6C 6A 6D 25 24 23 22 21 20 19
42 43 44 45
2K 1L 2M 1N
DQb5 DQb6 DQb7 DQb8
DQa3
6L
9
DQa2 DQa1 ZZ
6N 7P 7T 5T 6R 4P 6T 5R
8 7 6 5 4 3 2 1
46 47 48 49 50 51
2P 3T 2R 4N 2T 3R
DQb9 SA14 SA15 SA0 SA18 M1
SA3 SA2 SA1 SA16 M2
NOTE : 1. Pin 2B is a no connection pin to internal chip. This pin is a place holder for 16M part and the scanned data is fixed to "0" for this 8M part. 2. Pins 4G and 4H are no connection pin to internal chip. The scanned data are fixed to "0" and "1" respectively.
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
JTAG DC OPERATING CONDITIONS
Parameter Power Supply Voltage Input High Level Input Low Level Output High Voltage(IOH=-2mA) Output Low Voltage(IOL=2mA) Symbol VDD VIH VIL VOH VOL Min 3.15 1.7 -0.3 2.1 VSS
Preliminary 256Kx36 & 512Kx18 SRAM
Typ 3.3 -
Max 3.45 VDD+0.3 0.8 VDD 0.2
Unit V V V V V
Note
NOTE : 1. The input level of SRAM pin is to follow the SRAM DC specification.
JTAG AC TEST CONDITIONS
Parameter Input High/Low Level Input Rise/Fall Time Input and Output Timing Reference Level
NOTE : 1. See SRAM AC test output load on page 7.
Symbol VIH/VIL TR/TF
Min 2.5/0.0 1.0/1.0 1.25
Unit V ns V
Note
1
JTAG AC Characteristics
Parameter TCK Cycle Time TCK High Pulse Width TCK Low Pulse Width TMS Input Setup Time TMS Input Hold Time TDI Input Setup Time TDI Input Hold Time SRAM Input Setup Time SRAM Input Hold Time Clock Low to Output Valid Symbol tCHCH tCHCL tCLCH tMVCH tCHMX tDVCH tCHDX tSVCH tCHSX tCLQV Min 50 20 20 5 5 5 5 5 5 0 Max 10 Unit ns ns ns ns ns ns ns ns ns ns Note
JTAG TIMING DIAGRAM
TCK
tCHCH tMVCH tCHMX tCHCL tCLCH
TMS
tDVCH tCHDX
TDI
tSVCH tCHSX
PI (SRAM)
tCLQV
TDO
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Aug. 2002 Rev 4.0
K7P803611B K7P801811B
119 BGA PACKAGE DIMENSIONS
14.000.10
Preliminary 256Kx36 & 512Kx18 SRAM
1.27
1.27
22.000.10 Indicator of Ball(1A) Location
20.500.10
C1.00
C0.70 0.7500.15
0.600.10 12.500.10
1.50REF 0.600.10
NOTE : 1. All Dimensions are in Millimeters. 2. Solder Ball to PCB Offset : 0.10 MAX. 3. PCB to Cavity Offset : 0.10 MAX.
119 BGA PACKAGE THERMAL CHARACTERISTICS
Parameter Junction to Ambient(at still air) Junction to Case Junction to Solder Ball Symbol Theta_JA Theta_JC Theta_JB Thermal Resistance 30.2 5.9 4.8 Unit C/W C/W C/W 2W Heating Note 1W Heating
NOTE : 1. Junction temperature can be calculated by : TJ = TA + PD x Theta_JA.
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Aug. 2002 Rev 4.0

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