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| MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s s SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP112 AND TIP117 3 1 s APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD112 and MJD117 form complementary PNP - NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM R1(typ) = 7K R2(typ) = 200 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Pt ot T stg Tj Parameter Collector-Emitter Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Value 100 100 5 2 4 0.05 20 -65 to 150 150 Unit V V V A A A W o o C C For PNP type voltage and current values are negative. September 1997 1/6 MJD112/MJD117 THERMAL DATA R thj-ca se Rt hj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient o Max Max 6.25 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol ICBO ICEO ICEX I EBO VCEO(sus) V CE(sat ) VBE( sat) V BE(on) hFE Parameter Collecto r Cut-of f Current (I E = 0) Collecto r Cut-of f Current (I B = 0) Collecto r Cut-of f Current Test Conditions VCB = 100 V VCB = 80 V VCE = 50 V VCB = 80 V VBE = -1.5V VCB = 80 V VBE = -1.5V T c = 125 o C Min. Typ. Max. 0.02 0.01 0.02 0.01 0. 5 2 100 IB = 8 mA IB = 40 mA IB = 40 mA VCE = 3 V VCE = 3 V VCE = 3 V VCE = 3 V 500 100 0 200 2 3 4 2. 8 120 00 Unit mA mA mA mA mA mA V V V V V Emitter Cut-off Current VEB = 5 V (I C = 0) Collecto r-Emitter Sustaining Voltage Collecto r-Emitter Saturation Voltage Collecto r-Base Saturation Voltage Base-Emitter Volta ge DC Current Gain I C = 30 mA IC = 2 A IC = 4 A IC = 4 A IC = 2 A I C = 0.5 A IC = 2 A IC = 4 A Pulsed: Pulse duration = 300 s, duty cycle 2 % Safe Operating Areas Derating Curve 2/6 MJD112/MJD117 DC Current Gain (NPN type) DC Current Gain (NPN type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/6 MJD112/MJD117 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward Voltage (PNP types) 4/6 MJD112/MJD117 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 DIM. H A C2 C DETAIL "A" A1 L2 D DETAIL "A" B = = 3 B2 = = L4 1 = G E 2 = A2 0068772-B 5/6 MJD112/MJD117 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 6/6 |
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