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| Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features * Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. * The CPH6701 is formed with two chips, one being equivalent to the CPH3106 and the other the SBS001, encapsulated in one package. * Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). Package Dimensions unit:mm 2153 [CPH6701] 0.2 2.9 6 5 4 0.6 0.15 0.05 1.6 2.8 1 2 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2x0.8mm) Symbol Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Emitter 2 : Base 3 : Anode 4 : Common (Collector, Cathode) 5 : Common (Collector, Cathode) 6 : Common (Collector, Cathode) SANYO : CPH6 Ratings -15 -12 -5 -3 -5 -600 1.3 150 -55 to +125 11 15 500 5 -55 to +125 -55 to +125 Unit V V V A A mA W C C V V mA A C C Marking : PA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80300TS (KOTO) TA-2852/61899TS (KOTO) TA-1524 No.6007-1/5 CPH6701 Electrical Characteristics at Ta = 25C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Turn-OFF Time [Di] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF IR C trr Rthj-a IR=400A IF=500mA VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2x0.8mm) 96 50 10 11 0.4 0.45 200 V V A pF ns C/W ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=-12V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-3A VCE=-2V, IC=-0.5A VCB=-10V, f=1MHz IC=-1.5A, IB=-30mA -15 -12 -5 30 90 10 200 70 280 36 -110 -0.85 -165 -1.2 MHz pF mV V V V V ns ns ns -0.1 -0.1 560 A A Symbol Conditions Ratings min typ max Unit IC=-1.5A, IB=-30mA V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-1mA, RBE= V(BR)EBO ton tstg tf IC=-10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Electrical Connection 6 5 4 1 2 3 A11501 Switching Time Test Circuit (TR) (Di) INPUT RB VR + OUTPUT 100mA PW=20s D.C.1% IB1 IB2 Duty10% 10mA 50 220F VBE=5V 470F VCC=-5V A11502 + 50 100 10 100mA RL 10s trr -5V A11503 -20IB1=20IB2=IC=-1.5A No.6007-2/5 CPH6701 -2.0 I C - VCE A 6m -14mA [TR] -200 -180 I C - VCE -0.8mA [TR] -0.7mA -12mA -10mA -8mA -6mA -160 -140 -120 -100 -80 -60 -40 -20 Collector Current, IC - A -1.4 -1.2 -1.0 -0.8 -0.6 Collector Current, IC - A -1.6 -1 -1.8 -0.6mA -0.5mA -0.4mA -4mA -2mA -0.3mA -0.2mA -0.4 -0.2 0 -0.1mA IB=0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 IB=0 0 -1 -2 -3 -4 -5 Collector-to-Emitter Voltage, VCE - V -5 Collector-to-Emitter Voltage, VCE - V [TR] 1000 7 5 I C - VBE VCE=-2V hFE - I C Ta=75C [TR] VCE=-2V Collector Current, IC - A -4 25C DC Current Gain, hFE 3 2 -25C -3 5C 25C -25C 100 7 5 3 2 10 -0.01 -1 0 0 0.2 0.4 0.6 Ta=7 -2 0.8 1.0 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 Base-to-Emitter Voltage, VBE - V -1000 7 5 3 2 -100 7 5 3 2 -10 7 5 3 2 -1.0 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 Collector Current, IC - A [TR] IC / IB=50 -10 7 VCE(sat) - I C VBE(sat) - I C [TR] IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) - mV Base-to-Emitter Saturation Voltage, VBE(sat) - V 5 3 2 Ta C C 5 25 =7 C 5 -2 -1.0 7 5 3 2 -25C Ta=75C 25C -0.1 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 Collector Current, IC - A -1000 7 5 3 2 -100 7 5 3 2 -10 7 5 3 2 -1.0 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 Collector Current, IC - A [TR] IC / IB=20 1000 7 5 3 2 100 7 5 3 2 VCE(sat) - I C fT - IC [TR] VCE =-2V Collector-to-Emitter Saturation Voltage, VCE(sat) - mV C 25C 75 a= C T 5 -2 Gain-Bandwidth Product, f T - MHz 10 7 57 -0.01 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 5 Collector Current, IC - A Collector Current, IC - A No.6007-3/5 CPH6701 1000 7 5 Cob - VCB [TR] f=1MHz ASO -10 7 5 [TR] 50 ICP IC Output Capacitance, Cob - pF Collector Current, IC - A 3 2 100 7 5 3 2 10 7 5 3 2 1.0 -0.1 2 3 5 7 -1.0 2 3 5 7 -10 2 3 5 3 2 -1.0 7 5 3 2 -0.1 7 5 3 2 10m s 0 s 1m 10 DC op s 0m s era tio n Ta=25C Single pulse Mounted on a ceramic board(600mm2x0.8mm) 2 3 5 7 -1.0 2 3 5 7 -10 2 Collector-to-Base Voltage, VCB - V 1.6 1.4 Collector-to-Emitter Voltage, VCE - V [TR] 7 5 3 P C - Ta I F - VF [SBD] Collector Dissipation, PC - W 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 M ou nte d Forward Current, IF - A 2 0.1 on a 125 C bo ard (60 0m m 2 0.01 7 5 3 2 2 x0 .8m m) 20 40 60 80 100 120 140 160 0 Ta= 0.1 75 3 0.2 0.3 -25 C 0.4 25C C ce ram ic 7 5 0.5 0.6 Ambient Temperature, Ta - C 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 70 Forward Voltage, IF - V [SBD] 5 3 2 I R - VR Ta=125C 100C 75C 50C C - VR [SBD] f=1MHz Interterminal Capacitance, C - pF 12 14 Reverse Current, IR - mA 100 7 5 3 2 25C 2 4 6 8 10 10 3 5 7 1.0 2 3 5 7 10 2 Reverse Voltage, VR - V 14 Reverse Voltage, VR - V IS - t [SBD] Current waveform 50Hz sine wave 1s 20ms Surge Forward Current, IS (Peak) - A 12 10 t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t - s No.6007-4/5 CPH6701 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS No.6007-5/5 |
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