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| Datasheet File OCR Text: |
| AP1000C-11 SILICON PIN DIODE DESCRIPTION: The AP1000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device Iis Designed to Cover a Wide Range of Control Applications Such as RF Switching, Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming. PACKAGE STYLE 01 MAXIMUM RATINGS I V PDISS TJ TSTG JC O O 100 mA 100 V 250 mW @ TA = 25 C -65 C to +175 C -65 C to +175 C 30 C/W O O O O CHARACTERISTICS SYMBOL VB CJ CP LS RS TL Trr I-REGION IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 A VR = 50 V VR = 40 V TC = 25 C O NONE TEST CONDITIONS f = 1.0 MHz f = 1.0 MHz f = 500 MHz IR = 6.0 mA IR = 100 mA @ 90% MINIMUM 100 TYPICAL MAXIMUM 0.15 UNITS V pF pF nH 0.10 1.0 1.5 100 20 12 Ohms nS nS M A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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