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| Datasheet File OCR Text: |
| FH1100 SILICON DIODE DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode. PACKAGE STYLE DO-7 FEATURES INCLUDE: * QS = 1.6 pC Typ. * C = 1.0 pF Max. @ f = 890 MHz * Hermetic Glass Package MAXIMUM RATINGS IF VR PDISS TJ TSTG Tsoldering 10 mA 5.0 V 100 mW @ TC = 25 C -65 C to +125 C -65 C to +150 C +260 C for 5 Seconds CHARACTERISTICS SYMBOL VF IR VBR CT0 NF QS IF = 10 mA IF = 10 mA VR = 1.0 V TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 550 1.0 UNITS mV A V IR = 100 A VR = 0 V f = 1.0 MHz f = 890 MHz 5.0 1.0 10 1.6 pF dB pC A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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