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| STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST E40NA60 V DSS 600 V R DS(on) < 0.135 ID 40 A s s s s s s s s s TYPICAL RDS(on) = 0.12 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED ISOTOP APPLICATIONS s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (*) P to t Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor T st g Tj V ISO Storage Temperature Max. Operating Junction T emperature Insulation W ithhstand Voltage (AC-RMS) o o o Value 600 600 30 40 26 160 460 3.6 -55 to 150 150 2500 Unit V V V A A A W W/ o C o o C C V (*) Pulse width limited by safe operating area January 1998 1/5 STE40NA60 THERMAL DATA R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heatsink W ith Conductive Grease Applied Max Max 0.27 0.05 o o C/W C/W AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e 20 3000 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 500 A V GS = 0 Min. 900 250 1000 200 Typ . Max. Un it V A A nA V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS =0.8x Max Rating Gate-body Leakage Current (V DS = 0) V GS = 30 V Tc = 125 C o ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 1mA ID = 20 A 40 Min. 2.25 Typ . 3 0.12 Max. 3.75 0.135 Un it V A Static Drain-source On V GS = 10V Resistance On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1.0 MHz I D = 20 A VGS = 0 Min. 20 13000 1500 350 16000 1700 450 Typ . Max. Un it S pF pF pF 2/5 STE40NA60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 300 V R G = 4.7 V DD = 480 V I D = 20 A VGS = 10 V I D = 40 A VGS = 10 V Min. Typ . 55 95 460 48 217 Max. 75 125 600 Un it ns ns nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 480 V R G = 4.7 I D = 40 A V GS = 10 V Min. Typ . 95 30 140 Max. 125 40 180 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40 A V GS = 0 1050 31.5 60 Test Cond ition s Min. Typ . Max. 40 160 1.6 Un it A A V ns C A I SD = 40 A di/dt = 100 A/s o Tj = 150 C V R = 100 V () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STE40NA60 ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J C K L M 4/5 H STE40NA60 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5 |
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