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| KSA1156 KSA1156 High Voltage Switching Low Power Switching Regulator DC-DC Converter * High Breakdown Voltage * Low Collector Saturation Voltage * High Speed Switching 1 TO-126 2.Collector 3.Base 1. Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Ratings - 400 - 400 -7 - 0.25 - 0.5 -1 1 10 150 - 55 ~ 150 Units V V V A A A W W C C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) VCEX(sus) ICBO IEBO ICEX1 ICEX2 hFE VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time Test Condition IC = - 100mA, IB = - 10mA L = - 20mH IC = - 200mA, IB1 = - IB2 = - 20mA VBE(off)= 5V, L = 10mH VCB = - 400V, IE = 0 VEB = - 5V, IC = 0 VCE = - 400V, VBE(off) = 1.5V VCE = - 400V, VBE(off) = 1.5V TC= 125C VCE = - 5V, IC = - 100mA IC = - 100mA, IB = - 10mA IC = - 100mA, IB = - 10mA VCC = - 150V, IC = - 100mA IB1= - 10mA , IB2 = 20mA RL = 1.5K 30 Min. - 400 - 400 - 100 - 10 - 100 -1 200 -1 - 1.2 1 4 1 V V s s s Max. Units V V A A A mA hFE Classification Classification hFE (c)2000 Fairchild Semiconductor International N 30 ~ 60 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 Rev. A, February 2000 KSA1156 Typical Characteristics -0.5 1000 IB = -200mA IC[A], COLLECTOR CURRENT -0.4 IB = -180mA VCE = -5V Pulse Test IB = -140mA -0.3 hFE, DC CURRENT GAIN -10 IB = -160mA 100 IB = -120mA IB = -100mA -0.2 IB = -80mA IB = -60mA 10 -0.1 IB = -40mA IB = -20mA -0.0 -0 -2 -4 -6 -8 1 -0.1 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -10 IC = 10 IB IC[A], COLLECTOR CURRENT IC MAX. (Pulse) -1 -1 VBE(sat) -0.1 DI s S D LIM SIPA C ITE TIO N D 1m 10 10 0 S/ b -0.1 LI VCE(sat) M IT -0.01 -0.01 -0.1 -1E-3 -1 -10 -100 -1000 -1 -10 -100 VCEOMAX. -1000 200 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE ED Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Safe Operating Area -250 160 140 IC(mA), COLLECTOR CURRENT -200 120 dT(%),IcDERATING -150 100 80 S/b Di ss ip a Lim ited -100 60 tio n 40 -50 20 Li m ite d -0 -0 -100 -200 -300 -400 -500 0 0 50 o 100 150 VCE (v), COLLECTOR EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1156 Typical characteristics (Continued) 16 14 PC[W], POWER DISSIPATION 12 10 8 6 4 2 0 0 50 o 100 150 200 TC[ C], CASE TEMPERATURE Figure 7. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1156 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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