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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2002.04.03 Page No. : 1/3 HSB649A SILICON PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSD669A. Absolute Maximum Ratings (Ta=25C) TO-126ML * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation ........................................................................................................ 1 W Total Power Dissipation (Tc=25C) ..................................................................................... 20 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage.................................................................................... -180 V BVCEO Collector to Emitter Voltage................................................................................. -160 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current (DC) .................................................................................................. -1.5 A IC Collector Current (Pulse) ................................................................................................ -3 A Electrical Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -10 -1 -1.5 200 Unit V V V uA V V Test Conditions IC=-1mA, IE=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCB=-160V, IE=0 IC=-500mA, IB=-50mA IC=-150mA, VCE=-5V IC=-150mA, VCE=-5V IC=-500mA, VCE=-5V IC=-150mA ,VCE=-5V VCB=-10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Classification Of hFE1 Rank Range B 60-120 C 100-200 HSB649A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 VCE(sat) @ IC=10IB 125 C o Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2002.04.03 Page No. : 2/3 Saturation Voltage & Collector Current Saturation Voltage (mV) 75 C 100 25 C o o 1000 hFE 125 C 100 25 C o o 10 hFE @ VCE=5V 75 C o 1 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 10000 VBE(ON) @VCE=5V 100 Capacitance & Reverse-Biased Voltage 75 C 1000 25 C o o Capacitance (pF) ON Voltage (mV) Cob 10 125 C o 100 1 10 100 1000 10000 1 0.1 1 10 100 Collector Current-IC (mA) Reverse-Biased Voltage (V) Safe Operating Area 100000 10000 Collector Current (mA) 1000 100 PT=1ms PT=100ms PT=1s 10 1 1 10 100 1000 Forward Biased Voltage (V) HSB649A HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking: Spec. No. : HE6629 Issued Date : 1995.12.18 Revised Date : 2002.04.03 Page No. : 3/3 A H SB Rank Control Code B D E F 3 2 I G 1 J M L K O H Date Code 649A C Style: Pin 1.Emitter 2.Collector 3.Base N 3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB649A HSMC Product Specification |
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