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| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5218 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5218 is a GaAs MMIC chip especially designed for 18.0 ~ 19.0 GHz band High Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 Vd1 Vd2 FEATURES RF frequency : 18.0 to 19.0 GHz P1dB : 29.0 dBm(min.) @ 18.0 to 19.0 GHz In Vd1 Out Vg1 Vg2 Vd1 Vd2 Chip size: 1940 m x 2000 m TARGET SPECIFICATIONS (Ta=25C) Symbol IDSS1 IDSS2 Vp1 Vp2 P1dB Gain Output Return Loss Parameter Drain Saturation Current Drain Saturation Current Pinch Off Voltage Pinch Off Voltage Output Power at 1 dB Compression Point Gain Output Return Loss f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA*, Id2=720mA* Pout=TBD *:Ids at RF off Vd=3.0V,Id=0.6mA Vd=3.0V,Id=1.2mA f=18 - 20 GHz, Vd1=Vd2=6.0V , Id1=360mA*, Id2=720mA* -2.0 -2.0 29.0 15.0 8.0 8.0 Test Conditions Vd=3.0V Min. Limits Typ. 720 1440 -1.0 -1.0 Max. Unit mA mA V V dBm dB dB dB Input Return Loss Input Return Loss IM3 Inter Modulation Level TBD dBc MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5218 K-Band 2-Stage Power Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : M) Vg2 (-0.2 to -1.0 V) Vd1 Vg1 (-0.2 to -1.0 V) Vd2 GND RF-in GND Vd1 GND RF-out GND Vg1 Vg2 Vd1 Vd2 130 275 990 975 1535 1940 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5218 K-Band 2-Stage Power Amplifier TYPICAL CHARACTERISTICS S-Parameter vs. Frequency (Vd = 5 V) 15 10 5 0 -5 -10 -15 -20 14 16 S22 S11 S21 18 20 Frequency [GHz] 22 24 Output Power Performances (Vd = 5 V) 34 33 32 31 30 29 28 27 26 14 16 18 20 Frequency [GHz] 22 24 MITSUBISHI ELECTRIC as of July '98 |
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