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Ordering number:EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features * High fT. * High breakdown voltage. * Small reverse transfer capacitance and excellent high-frequency characteristic. * Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions SANYO : PCP (Bottom view) Ratings (-)200 (-)200 (-)4 (-)100 (-)200 500 Unit V V V mA mA mW W Mounted on ceramic board (250mm2x0.8mm) Tj Tstg 1.3 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE1 hFE2 fT Cob Cre VCE(sat) VBE(sat) VCB=(-)150V, IE=0 VEB=(-)2V, IC=0 VCE=(-)10V, IC=(-)10mA VCE=(-)10V, IC=(-)60mA VCE=(-)30V, IC=(-)30mA VCB=(-)30V, f=1MHz VCB=(-)30V, f=1MHz IC=(-)20mA, IB=(-)2mA IC=(-)20mA, IB=(-)2mA (-)200 (-)200 (-)4 40* 20 400 1.8 (2.3) 1.4 (1.7) (-)1.0 (-)1.0 MHz pF pF pF pF V V V V V Conditions Ratings min typ max (-)0.1 (-)1.0 320* Unit A A V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)100A, IC=0 * : The 2SA1575/2SC4080 are classified by 10mA hFE as follows : 40 C 80 60 D 120 100 E 200 160 F 320 Marking 2SA1575 : AF 2SC4080 : CI hFE rank : C, D, E, F SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72098HA (KT)/7139MO, TS No.3171-1/2 2SA1575/2SC4080 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice. PS No.3171-2/2 |
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