 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Transistors High Power 2N5630 2N5631 2N6030 2N6031 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 -120 -140 VOLTS 200 WATTS NPN . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. * High Collector Emitter Sustaining Voltage -- VCEO(sus) = 120 Vdc -- 2N5630, 2N6030 VCEO(sus) = 140 Vdc -- 2N5631, 2N6031 * High DC Current Gain -- @ IC = 8.0 Adc hFE = 20 (Min) -- 2N5630, 2N6030 hFE = 15 (Min) -- 2N5631, 2N6031 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc MAXIMUM RATINGS (1) Rating PNP PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII II I I III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III I II II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC IB PD 2N5630 2N6030 120 120 2N5631 2N6031 140 140 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 7.0 16 20 Collector Current -- Continuous Peak Base Current -- Continuous 5.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 200 1.14 Watts W/_C TJ, Tstg - 65 to + 200 CASE 1-07 TO-204AA (TO-3) _C THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol JC Max Unit 0.875 _C/W (1) Indicates JEDEC Registered Data. 200 150 100 50 0 0 20 40 60 80 100 120 140 TC, TEMPERATURE (C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N5630 2N5631 2N6030 2N6031 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width s, Duty Cycle (2) fT = |hfe| * ftest ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS For PNP test circuit, reverse all polarities and D1. +11 V Small-Signal Current Gain (IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 2.0 Vdc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 16 Adc, IB = 4.0 Adc) DC Current Gain (IC = 8.0 Adc, VCE = 2.0 Vdc) Emitter-Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) Collector-Base Cutoff Current (VCB = Rated VCB, IE = 0) Collector-Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) Collector-Emitter Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 70 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) (IC = 16 Adc, VCE = 2.0 Vdc) 25 s v300 RB t, TIME ( s) 0 2 tr, tf 10 ns DUTY CYCLE = 1.0% - 9.0 V Figure 2. Switching Times Test Circuit -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 51 Characteristic D1 VCC + 30 V w 2.0%. RC SCOPE 2N5630, 2N6030 2N5631, 2N6031 2N5630, 2N6030 2N5631, 2N6031 2N5630, 2N6030 2N5631, 2N6031 All Types 0.03 0.2 0.3 0.07 0.05 3.0 2.0 0.1 0.3 0.2 1.0 0.7 0.5 2N5630, 31 2N6030, 31 All Types Motorola Bipolar Power Transistor Device Data 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 2N5629, 30, 31 2N6029, 30, 31 VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol ICBO ICEO IEBO ICEX Cob hFE hfe fT tr Min 120 140 1.0 20 15 4.0 15 -- -- -- -- -- -- -- -- -- -- -- -- TJ = 25C IC/IB = 10 VCE = 30 V 500 1000 Max 1.5 1.8 1.0 2.0 5.0 2.0 2.0 7.0 2.0 2.0 80 60 -- -- -- -- Figure 3. Turn-On Time td @ VBE(off) = 5.0 V 10 MHz Unit Vdc Vdc Vdc Vdc pF -- -- mAdc mAdc mAdc mAdc 20 2N5630 2N5631 2N6030 2N6031 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.02 0.01 0.02 SINGLE PULSE 0.01 0.05 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 0.05 0.1 0.2 Figure 4. Thermal Response 20 5.0 ms IC, COLLECTOR CURRENT (AMP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 dc 0.5 ms 50 ms TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C CURVES APPLY BELOW RATED VCEO 1.0 ms 2N5630, 2N6030 2N5631, 2N6031 0.3 0.2 2.0 3.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 5. Active-Region Safe Operating Area NPN 2N5630, 2N5631 5.0 TJ = 25C IC/IB = 10 IB1 = IB2 VCE = 30 V t, TIME ( s) 4.0 3.0 PNP 2N6030, 2N6031 TJ = 25C IB1 = IB2 IC/IB = 10 VCE = 30 V 3.0 t, TIME ( s) 2.0 ts ts 2.0 1.0 0.6 0.4 0.3 tf 1.0 0.7 0.5 0.2 tf 0.3 0.5 0.7 1.0 5.0 7.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 0.2 0.2 0.3 0.5 0.7 1.0 5.0 7.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 3 2N5630 2N5631 2N6030 2N6031 NPN 2N5630, 2N5631 1000 700 C, CAPACITANCE (pF) 500 Cib 300 200 Cob 100 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 200 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) TJ = 25C C, CAPACITANCE (pF) TJ = 25C 1000 700 500 Cib 2000 NPN 2N5630, 2N5631 300 Cob 100 200 Figure 7. Capacitance 500 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 TJ = 150C 25C - 55C VCE = 2.0 V VCE = 10 V 500 300 200 hFE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 TJ = +150C + 25C - 55C VCE = 2.0 V VCE = 10 V 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 2.0 TJ = 25C 1.6 1.2 IC = 4.0 A 8.0 A 16 A 1.2 IC = 4.0 A 8.0 A 16 A 0.8 0.8 0.4 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 Figure 9. Collector Saturation Region 4 Motorola Bipolar Power Transistor Device Data 2N5630 2N5631 2N6030 2N6031 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N5630 2N5631 2N6030 2N6031 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N5630/D* 2N5630/D |
Price & Availability of 2N5631
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |