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| MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. The MGF4714CP is mounted in Super 12 tape. OUTLINE DRAWING (0.6) 1 Unit:millimeters 2 FEATURES * Low noise figure NFmin.=1.00dB(MAX.) * High associated gain Gs=11.0dB(MIN.) @f=12GHz @f=12GHz 2 (o1.2) 3 0.50.1 APPLICATION L to Ku band low noise amplifiers. 2.20.2 (8) (R0.1) (R0.1) QUALITY GRADE * GG 4.00.3 RECOMMENDED BIAS CONDITIONS * VDS=2V,ID=10mA * Refer to Bias Procedure 1 Gate 2 Source 3 Drain GD-22 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V mA mW C C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol V(BR)GDO IGSS IDSS VGS(off) gm GS NFmin. Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Transconductance Associated gain Minimum noise figure IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500A VDS=2V,ID=10mA VDS=2V,ID=10mA f=12GHz Test conditions Min -3 - 15 -0.1 - 11.0 - Limits Typ - - - - 55 - - Max - 50 60 -1.5 - - 1.00 Unit V A mA V mS dB dB Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS (Ta=25C) ID vs. VGS 50 Ta=25C VDS=2V 40 60 50 40 30 30 20 20 10 VGS=0V ID vs. VDS Ta=25C VGS=-0.1V/STEP 10 0 -1.0 -0.5 0 0 1.0 2.0 3.0 4.0 5.0 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) NF & Gs vs. ID (f=12GHz) Ta=25C VDS=2V GS 12 1.0 0.9 0.8 0.7 0.6 0.5 NF 11 10 14 13 0 5 10 15 20 25 30 ID (mA) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT S PARAMETERS Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 (Ta=25C,VDS=2V,ID=10mA) S11 S21 Angle -16.5 -32.9 -48.0 -63.8 -81.0 -98.1 -115.1 -128.8 -143.3 -157.5 -171.9 174.9 163.1 155.1 146.3 137.0 127.2 118.1 Mag. 5.491 5.292 5.146 4.963 4.777 4.497 4.217 3.951 3.683 3.450 3.225 3.027 2.833 2.666 2.529 2.410 2.310 2.193 Angle 162.9 147.0 133.9 119.4 104.3 89.9 75.9 64.8 52.8 41.1 29.5 18.5 8.3 -0.7 -9.9 -20.3 -30.2 -40.3 Mag. 0.022 0.040 0.057 0.073 0.084 0.095 0.099 0.101 0.102 0.102 0.099 0.098 0.096 0.095 0.092 0.094 0.091 0.093 S12 Angle 64.0 66.1 59.0 47.0 36.9 27.8 19.2 13.4 7.2 1.4 -4.0 -9.8 -12.9 -14.1 -16.6 -20.2 -25.1 -31.4 Mag. 0.655 0.630 0.596 0.546 0.493 0.444 0.397 0.364 0.344 0.335 0.338 0.341 0.356 0.375 0.395 0.432 0.454 0.476 S22 Angle -13.6 -26.0 -37.2 -49.8 -64.5 -79.4 -94.6 -107.2 -121.6 -136.7 -152.7 -166.5 -178.1 175.1 166.3 158.1 149.5 143.2 Mag. 0.990 0.952 0.912 0.858 0.798 0.731 0.681 0.645 0.615 0.591 0.573 0.564 0.570 0.575 0.578 0.580 0.585 0.593 NOISE PARAMETERS Freq. (GHz) 12 (Ta=25C,VDS=2V,ID=10mA) opt Magn. 0.32 Angle(deg.) 163 Rn () 2.52 NFmin. (dB) 0.65 Gs (dB) 12.5 Nov. 97 |
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