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| PT4800/PT4800F/PT4810/PT4810F/PT4850F PT4800/PT4800F/PT4810 PT4810F/PT4850F s Features 1. Thin type package ( Thickness : 1.5mm ) 2. Visible light cut-off type : PT4800F/PT4810F/PT4850F 3. Single phototransistor output : PT4800/PT4800F/PT4850F Darlington phototransistor output: PT4810/PT4810F 4. Thin type Thin Type Phototransistor s Outline Dimensions Rest of gate : 0.3MAX 3.0 1.0 2 - C0.5 0.8 1.6 ( Unit : mm ) Burry's dimensions : 0.3MAX 0.8 2 - 0.45 2 - 0.9 1.7 3.5 PT4800/F PT4850F 2 g Epoxy resin 1.5 0.8 0.7 0.8 1.8 s Applications 1. VCRs 2. Floppy disk drives 2.54 1 2 0.5MIN. PT4810F Mark(blue) PT4850F Mark (black ) 17.5 0.5 1 PT4810/F 2 2 - 0.25 1 1 Emitter 2 Collector g Epoxy resin PT4800 PT4810 F type Transparent resin Transparent blue resin Visible light cut-off resin ( black ) s Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage PT4800/PT4800F/PT4850F Collector current PT4810/PT4810F Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 20 50 75 - 25 to + 85 - 40 to + 85 260 ( Ta = 25C ) Unit V V mA mW C C C *1 For 3 seconds at the position of 1.8mm from the bottom face of resin package " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " PT4800/PT4800F/PT4810/PT4810F/PT4850F s Electro-optical Characteristics Parameter PT4800 PT4800F *2 Collector current PT4850F PT4810 PT4810F PT4800/PT4800F PT4850F Collector dark current PT4810/PT4810F PT4800/PT4800F *2 PT4850F Collector-emitter saturation voltage PT4810/PT4810F Collector-emitter breakdown voltage Emitter-collector breakdown voltage PT4800 PT4800F PT4850F PT4810 PT4810F PT4800/PT4800F PT4850F PT4810/PT4810F Response time Fall time PT4810/PT4810F Half intensity angle PT4800/PT4800F PT4850F tf Symbol Conditions Ee = 1mW/cm2 VCE = 5V Ee = 0.1mW/cm 2 VCE = 2V ICEO Ee = 0, VCE = 20V Ee = 0, VCE = 10V Ee = 10mW/cm2 IC = 0.5mA Ee = 1mW/cm2 IC = 2.5mA IC = 0.1mA Ee = 0 IE = 0.01mA Ee = 0 MIN. 0.12 0.08 0.12 0.45 0.27 35 6 TYP. 0.4 0.25 800 860 860 800 860 3.0 80 3.5 70 35 ( Ta = 25C ) MAX. 1.0 0.75 0.56 7.0 6.0 0.1 1.0 0.4 1.0 400 350 Unit mA mA mA mA mA mA mA V V V V nm nm nm nm nm s s s s IC V CE ( sat ) BV CEO BV ECO Peak sensitivity wavelength p - Rise time tr VCE = 2V, I C = 2mA RL = 100 VCE = 2V IC = 10mA RL = 100 VCE = 2V, I C = 2mA RL = 100 VCE = 2V IC = 10mA RL = 100 - *2 E e : Irradiance by CIE standard light source A ( tungsten lamp) Fig. 1 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation P C ( mW ) Fig. 2-a Collector Dark Current vs. Ambient Temperature ( PT4800/PT4800F/PT4850F ) -6 10 5 VCE = 20V 100 (A) CEO 2 10 - 7 5 2 Collector dark current I 0 25 50 75 85 Ambient temperature T a ( C ) 100 80 60 10 - 8 5 2 40 10 - 9 5 2 20 0 - 25 10 - 10 0 25 50 75 Ambient temperature T a ( C ) 100 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 2-b Collector Dark Current vs. Ambient Temperature ( PT4810/PT4810F ) -4 10 5 5 5 5 5 5 5 5 Fig. 3-a Relative Collector Current vs. Ambient Temperature ( PT4800/PT4800F/PT4850F ) 160 140 Relative collector current ( % ) 120 100 80 60 40 20 0 0 VCE = 5V E e = 1mW/cm 2 10 - 5 (A) CEO V CE = 10V 10 - 6 10 - 7 10 - 8 10 - 9 10 - 10 10 - 11 - 25 0 25 50 75 Ambient temperature Ta ( C ) 100 Collector dark current I 10 20 30 40 50 60 Ambient temperature T a ( C ) 70 Fig. 3-b Relative Collector Current vs. Ambient Temperature ( PT4810/PT4810F ) 175 VCE = 2V E e = 0.1mW/cm 2 Fig. 4-a Collector Current vs. Irradiance 20 10 Collector current I C ( mA ) 5 V CE = 5V T a = 25C ( PT4800 ) Relative collector current ( % ) 150 125 2 1 0.5 100 75 0.2 50 - 25 0.1 0.1 0 25 50 75 Ambient temperature T a ( C ) 100 0.2 0.5 2 5 1 Irradiance E e ( mW/cm2 ) 10 20 Fig. 4-b Collector Current vs. Irradiance ( PT4800F/PT4850F ) 10 V CE = 5V 5 T a = 25C Collector current I C ( mA ) Fig. 4-c Collector Current vs. Irradiance ( PT4810/PT4810F ) 5 V CE = 2V T a = 25C Collector current I C ( mA ) 2 PT4810 PT4810F 2 1 0.5 1 0.5 0.2 0.1 0.05 0.1 0.2 0.2 0.5 1 2 5 Irradiance E e ( mW/cm2 ) 10 20 0.1 2 5 2 10-1 Irradiance E e ( mW/cm2 ) 5 1 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 5-a Collector Current vs. Collector-emitter Voltage (PT4800 ) 0.6 T a = 25C 0.5 Collector current I C ( mA ) Collector current I C ( mA ) Fig. 5-b Collector Current vs. Collector-emitter Voltage (PT4800F/PT4850F ) 1.2 T a = 25C E e = 3mW/cm2 2.5mW/cm 2 0.8 2.0mW/cm2 1.5mW/ cm 2 0.4 1.0mW/cm 2 0.2 0.6mW/cm 2 0.8mW/cm 2 1.0 0.4 E e = 1.0mW/cm 2 0.3 0.75mW/cm2 0.6 0.2 0.5mW/cm2 0.1 0.25mW/cm2 0.1mW/cm2 0 0 5 10 15 20 25 30 Collector-emitter voltage V CE ( V ) 35 0 0 2 4 6 8 10 12 Collector-emitter voltage V CE ( V ) 14 Fig. 5-c Collector Current vs. Collector-emitter Voltage (PT4810 ) 2.4 T a = 25C 2.0 Collector current I C ( mA ) E e = 0.2mW/cm2 Fig. 5-d Collector Current vs. Collector-emitter Voltage (PT4810F ) 1.2 T a = 25C 1.0 ( mA ) Ee = 0.2mW/cm2 0.15mW/cm2 1.2 0.1mW/cm2 0.08mW/cm2 0.4 0.06mW/cm2 0.04mW/cm2 1 2 3 4 Collector-emitter voltage V 0.02mW/cm2 5 (V) 6 Collector current I C 1.6 0.8 0.15mW/cm2 0.6 0.8 0.4 0.1mW/cm2 0.08mW/cm2 0.06mW/cm2 0.04mW/cm2 0.02mW/cm2 0.2 0 0 0 0 1 CE 2 3 4 Collector-emitter voltage V CE 5 (V) 6 Fig. 6 Spectral Sensitivity 100 T a = 25C Fig. 7-a Response Time vs. Load Resistance ( PT4800/PT4800F/PT4850F ) 100 50 Response time t r , t f ( s ) V CE = 2V I C = 2mA T a = 25C 80 Relative sensitivity ( % ) PT4800 20 10 5t f tr 2 60 PT4810 PT4800F PT4801F PT4850F tr tf 40 20 0 400 500 600 700 800 900 Wavelength ( nm ) 1000 1100 1 0.1 0.2 1 0.5 2 Load resistance R L ( k ) 5 10 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 7-b Response Time vs. Load Resistance ( PT4810 / PT4810F ) 1000 VCE = 2V I C = 10mA T a = 25C Response time ( s ) 100 tr tf VCC td 10 ts RL Output 90% 10% Output Input Test Circuit for Response Time ( PT4800 / PT4800F/ PT4850F ) tr tf 1 10 100 1000 Load resistance R L ( ) 5000 Test Circuit for Response Time ( PT4810 / PT4810F ) Fig. 8 Sensitivity Diagram - 20 - 10 0 100 - 30 80 Relative sensitivity ( % ) ( Ta = 25C) + 10 + 20 + 30 Output Input VCC RL Output td tr ts tf 90% - 40 60 + 40 - 50 10% - 60 - 70 - 80 - 90 40 + 50 + 60 20 + 70 + 80 0 Angular displacement + 90 Fig. 9-a Collector-emitter Saturation Voltage vs. Irradiance (PT4800 ) 2.2 2.0 Collector-emitter saturation voltage V CE(sat) 1.8 I C = 0.05mA 0.1mA 0.5mA 1.0mA 1.5mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 2 1 Irradiance E e ( mW/cm2 ) 5 10 T a = 25C Fig. 9-b Collector-emitter Saturation Voltage vs. Irradiance ( PT4800F/ PT4850F ) 2.2 2.0 Collector-emitter saturation voltage V CE(sat) ( V ) 1.8 I C = 0.05mA 0.5mA 0.1mA 1.0mA 1.5mA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 T a = 25C 0 0.1 0.2 0.5 2 5 1 Irradiance E e ( mW/cm2 ) 2.0mA 1.6 10 20 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 9-c Collector-emitter Saturation Voltage (PT4810 ) vs. Irradiance 2.2 I C = 0.5mA I C = 0.5mA 1mA 2mA 4mA 6mA 8mA Fig.9-d Collector-emitter Saturation Voltage (PT4810F ) vs. Irradiance 2.0 Collector-emitter saturation voltage V CE(sat ) ( V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 T a = 25C 1mA 2mA 4mA 6mA 2.0 Collector-emitter saturation voltage V CE(sat ) ( V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 T a = 25C 0 0.01 0.02 0.05 0.1 0.2 0.5 Irradiance E e ( mW/cm 2 ) 1 2 0 0.01 0.02 0.05 0.1 0.2 0.5 Irradiance E e ( mW/cm2) 8mA 1 2 Fig.10-a Relative Output vs. Distance (PT4800F ) ( Emitter : GL4800 ) 100 50 20 10 5 2 1 0.5 0.2 0.5 1 2 5 10 20 50 Distance between emitter and detector d ( mm ) Fig.10-b Relative Output vs. Distance (PT4810F ) (Emitter : GL4800 ) 100 50 20 10 5 2 1 0.5 0.2 0.5 1 2 5 10 20 50 Distance between emitter and detector d ( mm ) q Please refer to the chapter " Precautions for Use" Relative output ( % ) Relative output ( % ) Application Circuits NOTICE qThe circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. qContact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. qObserve the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). qContact a SHARP representative in advance when intending to use SHARP devices for any "specific" applications other than those recommended by SHARP or when it is unclear which category mentioned above controls the intended use. qIf the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export such SHARP devices. qThis publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. qContact and consult with a SHARP representative if there are any questions about the contents of this publication. 115 |
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