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| BB 545 Silicon Tuning Diode Preliminary data * For tuning UHF and VHF TV Tuners * Large capacitance ratio, low series resistance Type BB 545 Marking Ordering Code white U Q62702-B583 Pin Configuration 1=K 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 20 - 55 ... + 150 - 55 ... + 150 Unit V mA C VR IF Top Tstg Thermal Resistance Junction ambient 1) RthJA 450 K/W 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BB 545 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 30 V, TA = 25 C VR = 30 V, TA = 85 C AC characteristics Diode capacitance CT 18.5 13.2 1.85 1.8 20 14.8 2.07 2 7.2 10 0.6 2 21.5 16.4 2.28 2.2 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/CT25 6.3 8.1 11 - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/CT28 9 CT/CT 2.5 nH % VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching 1) VR = 1 ... 28 V, f = 1 MHz Series resistance rs Ls VR = 3 V, f = 470 MHz Series inductance Semiconductor Group 2 Jan-31-1997 BB 545 Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 10 -1 1/C 22 pF CT 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 V 30 TCc 10 -2 10 -3 10 -4 10 -5 0 10 10 1 V VR VR Reverse current IR = f (VR) TA = Parameter 10 4 pA 10 3 85C Reverse current IR = f (TA) VR = 28V 10 4 pA IR IR 10 3 10 2 25C 10 1 10 2 10 0 10 -1 0 10 10 1 V 10 1 -30 -10 10 30 50 70 VR C TA 100 Semiconductor Group 3 Jan-31-1997 |
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