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2SK3130
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3130
Switching Regulator Applications
Unit: mm * * * * * * Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 6 24 40 345 6 4 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 16.8 mH, RG = 25 , IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution
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2SK3130
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 6 A - Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton ID = 3 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 100 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min 30 600 2.0 1.5 Typ. 1.12 5.0 1300 130 400 25 45 40 150 30 18 12 Max 10 100 4.0 1.55 pF Unit A V A V V S
10 V VGS 0V 50 VOUT

ns

RL = 100 VDD 300 V -

nC
Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 6 A, VGS = 0 V IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 85 0.21 Max 6 24 -1.7 Unit A A V ns C
Marking
K3130
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3130
ID - VDS
5 Common source Tc = 25C 4 Pulse test 5.8 3 5.6 2 15 10 10 6 8 15 10
ID - VDS
Common source Tc = 25C 6.4 Pulse test 6.2 6 6.0 4 5.8
(A)
ID
Drain current
5.4 5.2
Drain current
ID
(A)
1 VGS = 5.0 V 0 0 2 4 6 8 10
2
5.4 VGS = 5.0 V
0 0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
10 Common source 8 VDS = 20 V Pulse test 20
VDS - VGS
Common source
(V)
Tc = 25C 16 Pulse test
(A)
ID
Drain-source voltage
6
VDS
12 ID = 6 A 8 4 100 2 Tc = 25C
Drain current
4
3 1.5
0 0
2
4
6
8
10
0 0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
100 100 VDS = 20 V Pulse test
RDS (ON) - ID
()
Common source Tc = 25C Pulse test
Common source
(S)
Forward transfer admittance |Yfs|
10 Tc = 25C 100
Drain-source ON resistance
RDS (ON)
VGS = 10, 15 V 10
1
0.1 0.1
1
10
100
1 0.1
1
10
Drain current
ID (A)
Drain current
ID (A)
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2SK3130
RDS (ON) - Tc
5 Common source 4 VGS = 10 V Pulse test ID = 6 A 3 3 1.5 2 10 Common source
IDR - VDS
Drain-source ON resistance RDS (ON) ()
IDR (A)
Tc = 25C Pulse test
Drain reverse current
1
1
10 0 0 40 80 120 160 0.1 0 -0.2
5
3 -0.4
VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2
Case temperature
Tc
(C)
Drain-source voltage
VDS
(V)
Capacitance - VDS
3000 Ciss 1000 5
Vth - Tc
Common source
Vth (V)
(pF)
4
VDS = 10 V ID = 1 mA Pulse test
500 300 Coss
C
Gate threshold voltage
3
Capacitance
100 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10
2
Crss
1
10 0.1
30 50
100
Drain-source voltage
VDS
(V)
0 -80
-40
0
40
80
120
160
Case temperature
Tc
(C)
PD - Tc
50 500
Dynamic input/output characteristics
20
(W)
VDS (V)
40
400 VDS 300 VDD = 100 V 200 400 200 Common source ID = 6 A Tc = 25C Pulse test
16
PD
Drain power dissipation
Drain-source voltage
20
8
10
100
VGS
4
0 0
40
80
120
160
200
0 0
10
20
30
40
0 50
Case temperature
Tc
(C)
Total gate charge Qg (nC)
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Gate-source voltage
30
12
VGS
(V)
2SK3130
rth - tw
10
Normalized transient thermal impedance
1 Duty = 0.5
rth (t)/Rth (ch-c)
0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 3.125C/W 0.001 10 100 1m 0.01 0.1 1 10
Pulse width
Safe operating area
100
tw
(s)
500
EAS - Tch
(mJ) EAS Avalanche energy
ID max (pulsed) * 100 s * 10 ID max (continuous) 1 ms *
400
300
(A)
ID
200
Drain current
1
DC operation Tc = 25C
100
0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 100
50
75
100
125
150
Channel temperature (initial)
Tch
(C)
VDSS max 1000
Drain-source voltage
VDS
(V)
15 V -15 V
BVDSS IAR VDD VDS
Test circuit RG = 25 VDD = 90 V, L = 16.8 mH
E AS =
Wave form
B VDSS 1 L I2 2 B VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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