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BFW92
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D High power gain D Low noise figure
3
2
94 9308
13623
1
BFW92 Marking: BFW92 Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 300 150 -55 to +150 Unit V V V mA mW C C
Tamb 60 C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 300 Unit K/W
Document Number 85040 Rev. 3, 20-Jan-99
www.vishay.de * FaxBack +1-408-970-5600 1 (5)
BFW92
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 25 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 1 mA VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 15 V VCEsat 0.1 0.6 V hFE 20 100 150 hFE 20
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Test Conditions VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, IC = 14 mA, f = 300 MHz VCE = 5 V, IC = 25 mA, f = 300 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W, f = 500 MHz Power gain VCE = 5 V, IC = 10 mA, ZS = 50 W, f = 200 MHz VCE = 5 V, IC = 10 mA, ZS = 50 W, f = 800 MHz Signal-to-intermodulation VCE = 6 V, IC = 10 mA, ZL = 37.5 W, ratio V1 = 100 mV, f1 = 183 MHz, V2 = 100 mV, f2 = 200 MHz, fdIM = 217 MHz Parameter Transition frequency q y Symbol fT fT fT Ccb Cce Ceb F Gpe Gpe dIM Min 1 1.3 Typ 1.5 2.4 2.1 0.5 0.3 0.9 3.5 23 11 -45 Max Unit GHz GHz GHz pF pF pF dB dB dB dB
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Document Number 85040 Rev. 3, 20-Jan-99
BFW92
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
350 300 250 200 150 100 50 0 0
12845
C cb - Collector Base Capacitance ( pF )
400 P tot - Total Power Dissipation ( mW )
1.0 0.8 0.6 0.4 0.2 f=1MHz 0 0 4 8 12 16 20 VCB - Collector Base Voltage ( V )
20
40
60
80
100 120 140 160
13609
Tamb - Ambient Temperature ( C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
3000 f T - Transition Frequency ( MHz ) 2500 2000 1500 1000 500 0 0
13608
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
VCE=5V f=300MHz 5 10 15 20 25 30 35 40
IC - Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Document Number 85040 Rev. 3, 20-Jan-99
www.vishay.de * FaxBack +1-408-970-5600 3 (5)
BFW92
Vishay Telefunken Dimensions of BFW92 in mm
96 12244
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Document Number 85040 Rev. 3, 20-Jan-99
BFW92
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85040 Rev. 3, 20-Jan-99
www.vishay.de * FaxBack +1-408-970-5600 5 (5)

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