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| 2N3725 HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT (300 MHz) and tight control on storage time. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC Pt o t T s t g, T j January 1989 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C at T c as e 25 C Storage and Junction Temperature Value 80 80 50 6 1 0.8 3.5 - 65 to 200 Unit V V V V A W W C 1/6 2N3725 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 220 C/W C/W ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CBO V( B R)CBO V (BR)CES V( BR)CE O * V( B R)E BO V CE (s at )* Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V B E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Test Conditions V CB = 60 V V CB = 60 V I C = 10 A I C = 10 A I C = 10 mA I E = 10 A IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = = = = = = = = = 10 mA 100 mA 300 mA 500 mA 800 mA 1000 mA 10 mA 100 mA 300 mA 500 mA 800 mA 1000 mA 10 mA 100 mA 300 mA 1000 mA 800 mA 500 mA IB IB IB IB IB IB IB IB IB IB IB IB = 1 mA = 10 mA = 30 mA = 50 mA = 80 mA = 100 mA = 1 mA = 10 mA = 30 mA = 50 mA = 80 mA = 100 mA = = = = = = 1 1 1 5 2 1 V V V V V V T am b = 100 C 80 80 50 6 0.19 0.21 0.31 0.4 0.5 0.6 0.64 0.75 0.89 0.9 1.0 1.1 30 60 40 25 20 35 3 10 55 35 60 pF pF ns ns 60 90 60 65 40 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.2 1.5 1.7 150 Min. Typ. Max. 1.7 120 Unit A A V V V V V V V V V V V V V V V V V BE (s at )* Base-emitter Saturation Voltage h F E* DC Current Gain V CE V CE V CE V CE V CE V CE hfe C CB O C EB O t o n ** t o f f ** High Frequency Current Gain Collector-base Capacitance Emitter-base Capacitance Turn-on Time Turn off Time I C = 50 mA f = 100 MHz IE = 0 f = 1 MHz IC = 0 f = 1 MHz I C = 500 mA I B = 50 mA V CE = 10 V V CB = 10 V V CB = 0.5 V V CC = 30 V I C = 500 mA V CC = 30 V I B1 = - I B2 = 50 mA * Pulsed : pulse duration = 300 s, duty cycle = 1 %. ** See test circuit. 2/6 2N3725 DC Current Gain. Collector-emitter Saturation Voltage. Base-emitter Saturation Voltage. Contours of Constant Transition Frequency. Switching Characteristics. Switching Characteristics. 3/6 2N3725 Test Circuit for ton, toff. PULSE GENERATOR : tr, tf 1.0 ns PW 1.0 s ZIN = 50 DC < 2 % TO OSCILLOSCOPE : tr < 1.0 ns ZIN 100 K 4/6 2N3725 TO39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 5/6 2N3725 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6 |
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