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| TECHNICAL DATA IN74LV08 Quad 2-Input AND Gate The IN74LV08 is low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT08A. The IN74LV08 provides the 2-input AND function. * * * Optimized for Low Voltage applications: 1.2 to 3.6 V Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6 V Low Input Current ORDERING INFORMATION IN74LV08N Plastic IN74LV08D SOIC IZ74LV08 Chip TA = -40 ? 125C for all packages PIN ASSIGNMENT LOGIC DIAGRAM A1 B1 A2 B2 A3 B3 A4 B4 Y3 Y2 Y1 FUNCTION TABLE Y4 Input A L B L H L H Output Y = A*B L L L H PIN 14 =VCC PIN 7 = GND L H H H - high level L - low level INTEGRAL 1 IN74LV08 MAXIMUM RATINGS * Symbol VCC IIK * 1 2 Parameter DC supply voltage (Referenced to GND) DC input diode current DC output diode current DC output source or sink current -bus driver outputs DC VCC current for types with - bus driver outputs DC GND current for types with - bus driver outputs Power dissipation per package, plastic DIP+ SOIC package+ Storage temperature Lead temperature, 1.5 mm from Case for 10 seconds (Plastic DIP ), 0.3 mm (SOIC Package) Value -0.5 / +5.0 20 50 25 50 50 750 500 -65 / +150 260 Unit V mA mA mA mA mA mW C C IOK * IO * ICC IGND PD 3 Tstg TL * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 12 mW/C from 70 to 125C SOIC Package: : - 8 mW/C from 70 to 125C * 1: VI < -0.5V or VI > VCC+0.5V * 2: Vo < -0.5V or Vo > VCC+0.5V * 3: -0.5V < Vo < VCC+0.5V RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA tr, t f Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time VCC =1.2 V VCC =2.0 V VCC =3.0 V VCC =3.6 V Min 1.2 0 -40 0 0 0 0 Max 3.6 VCC +125 1000 700 500 400 Unit V V C ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or VOUT)VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. INTEGRAL 2 IN74LV08 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Symbol Parameter Test Conditions VCC, V 25C min VIH High-Level Input Voltage 1.2 2.0 3.0 3.6 1.2 2.0 3.0 3.6 1.2 2.0 3.0 3.6 3.0 1.2 2.0 3.0 3.6 3.0 3.6 3.6 3.6 0.9 1.4 2.1 2.5 1.1 1.92 2.92 3.52 2.48 max 0.3 0.6 0.9 1.1 0.09 0.09 0.09 0.09 0.33 -0.1 0.1 2.0 Guaranteed Limit -40C / 85C min 0.9 1.4 2.1 2.5 1.0 1.9 2.9 3.5 2.34 max 0.3 0.6 0.9 1.1 0.1 0.1 0.1 0.1 0.4 -1.0 1.0 20 -40C / 125C min 0.9 1.4 2.1 2.5 1.0 1.9 2.9 3.5 2.20 max 0.3 0.6 0.9 1.1 0.1 0.1 0.1 0.1 0.5 -1.0 1.0 40 V Unit VIL Low -Level Input Voltage V VOH High-Level Output VI = VIL or VIH Voltage IO = -50 A V VI = VIL or VIH IO = -6.0 mA VOL Low-Level Output VI = VIL or VIH Voltage IO = 50 A V V VI = VIL or VIH IO = 6.0 mA IIL III INN Low-Level Input Leakage Current VI = 0 V V A A A High-Level Input VI = VCC Leakage Current Quiescent Supply VI = 0 A or VCC Current IO = 0 A (per Package) INTEGRAL 3 IN74LV08 AC ELECTRICAL CHARACTERISTICS (CL=50 pF, t LH = t HL = 6.0 ns, VIL=0V, VIH=VCC, RL=1k? ) Symbol Parameter VCC V min tTHL, (t TLH) Output Transition Time, Any Output (Figure 1) Propagation Delay, Input A to Output Y (Figure 1) Input Capacitance 1.2 2.0 * 1.2 2.0 * 3.0 25C max 60 16 10 135 23 14 7.0 Guaranteed Limit -40C ? 85C min max 75 20 13 405 28 18 -40C ? 125C min max 90 24 15 405 34 21 pF ns Unit tPHL, (t PLH) CI CPD Power Dissipation Capacitance (Per Gate) OA=25N, VI=0V?V CC pF 44 * - VCC= (3.30.3) V Used to determine the no-load dynamic power consumption: PD = CPDVCC2fI+ ?(C LVCC2fo), fI-input frequency, fo- output frequency (MHz) ?(C LVCC2fo) - sum of the outputs tHL 0.9 tLH 0.9 V1 0.1 0.1 V CC GND Input A, B V1 tPHL tPLH V OH 0.9 0.9 V1 0.1 0.1 V1 Output Y tTHL V1 = 0.5 V CC tTLH VOL Figure 1. Switching Waveforms VCC VI PULSE GENERATOR RT DEVICE UNDER TEST VO CL RL Termination resistance RT should be equal to ZOUT pulse generators Figure 2. Test Circuit INTEGRAL 4 IN74LV08 CHIP PAD DIAG RAM IZ74LV08 12 13 1.20 0.03 11 10 09 08 Chip marking 25LV08 (x=1.009; y=0.727) 14 07 01 02 03 04 06 05 1.23 0.03 Pad size 0.108 x 0.108 mm (Pad size is given as per metallization layer) Thickness of chip 0.46 0,02 mm PAD LOCATION Pad No 01 02 03 04 05 06 07 08 09 10 11 12 13 14 Symbol A1 B1 Y1 A2 B2 Y2 GND Y3 A3 B3 Y4 A4 B4 Vcc X 0.111 0.111 0.504 0.672 1.009 1.009 1.009 1.009 1.009 0.672 0.504 0.336 0.111 0.111 Y 0.287 0.119 0.111 0.111 0.111 0.277 0.447 0.806 0.974 0.974 0.974 0.974 0.772 0.618 INTEGRAL 5 |
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