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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21193/D Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. * Total Harmonic Distortion Characterized * High DC Current Gain - hFE = 25 Min @ IC = 8 Adc * Excellent Gain Linearity * High SOA: 2.5 A, 80 V, 1 Second MJ21193* NPN MJ21194* *Motorola Preferred Device PNP 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS CASE 1-07 TO-204AA (TO-3) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current -- Continuous Collector Current -- Peak (1) Base Current -- Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43 - 65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 s, Duty Cycle 10%. VCEO(sus) ICEO 250 -- -- -- -- 100 Vdc Adc (continued) Symbol Min Typical Max Unit Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJ21193 MJ21194 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2% THD hFE unmatched hFE matched fT Cob -- -- 4 -- 0.8 0.08 -- -- -- -- -- 500 MHz pF % hFE 25 8 VBE(on) VCE(sat) -- -- -- -- 1.4 4 -- -- -- -- 2.2 Vdc Vdc 75 IS/b 5 2.5 -- -- -- -- Adc IEBO ICEX -- -- -- -- 100 100 Adc Adc Symbol Min Typical Max Unit PNP MJ21193 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 VCE = 10 V f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25C ftest = 1 MHz NPN MJ21194 10 V VCE = 5 V 1.0 IC COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product 2 Motorola Bipolar Power Transistor Device Data MJ21193 MJ21194 TYPICAL CHARACTERISTICS PNP MJ21193 1000 1000 NPN MJ21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 100C 25C - 25C TJ = 100C 25C 100 - 25C 100 VCE = 20 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJ21193 1000 1000 NPN MJ21194 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 100C 25C 100 - 25C TJ = 100C 25C 100 - 25C VCE = 5 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJ21193 30 1.5 A I C, COLLECTOR CURRENT (A) 25 20 15 0.5 A 10 5.0 TJ = 25C 0 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 IB = 2 A I C, COLLECTOR CURRENT (A) 35 NPN MJ21194 IB = 2 A 30 1.5 A 25 1A 20 15 10 5.0 TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0.5 A 1A Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 3 MJ21193 MJ21194 TYPICAL CHARACTERISTICS PNP MJ21193 3.0 SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VBE(sat) TJ = 25C IC/IB = 10 1.4 1.2 SATURATION VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 TJ = 25C IC/IB = 10 NPN MJ21194 VBE(sat) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJ21193 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C NPN MJ21194 TJ = 25C 1.0 VCE = 20 V (SOLID) VCE = 5 V (DASHED) VCE = 20 V (SOLID) 1.0 VCE = 5 V (DASHED) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage 100 10 1 SEC TC = 25C 1.0 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 1000 IC, COLLECTOR CURRENT (AMPS) 0.1 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data MJ21193 MJ21194 10000 TJ = 25C C, CAPACITANCE (pF) Cib C, CAPACITANCE (pF) 10000 TJ = 25C Cib 1000 Cob 1000 Cob f(test) = 1 MHz 100 0.1 1.0 10 100 100 0.1 f(test) = 1 MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJ21193 Typical Capacitance Figure 15. MJ21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER 50 DUT 0.5 SOURCE AMPLIFIER 0.5 8.0 DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit Motorola Bipolar Power Transistor Device Data 5 MJ21193 MJ21194 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJ21193/D* MJ21193/D |
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