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| Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.609 (Typ.) IRLM220A BVDSS = 200 V RDS(on) = 0.8 ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25C) Continuous Drain Current (TA=70C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25C) * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds (2) (1) (1) (3) (1) Value 200 1.13 0.9 9 20 29 1.13 0.2 5 2 0.016 - 55 to +150 C 300 Units V A A V mJ A mJ V/ns W W/C Thermal Resistance Symbol RJA Characteristic Junction-to-Ambient * Typ. -Max. 62.5 Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. A N-CHANNEL POWER MOSFET IRLM220A Characteristic -Min. Typ. Max. Units 200 -1.0 -----------------0.18 ------2.8 330 55 8 6 24 6 6 10.3 2.0 4.4 0.8 -430 70 30 25 20 60 20 15 --nC ns pF -2.0 100 -100 10 100 A S V V nA Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=20V VGS=--20V VDS=200V VDS=160V,TC=125C VGS=5V,ID=0.57A VDS=40V,ID=0.57A (4) (4) Electrical Characteristics (TC=25C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge V/C ID=250A VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=5A, RG=9 See Fig 13 VDS=160V,VGS=5V, ID=5A See Fig 6 & Fig 12 (4)(5) (4)(5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge (1) (4) Min. Typ. Max. Units --------140 0.59 1.13 9 1.5 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25C,IS=1.13A,VGS=0V TJ=25C,IF=5A diF/dt=100A/s (4) Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=35mH, IAS=1.13A, VDD=50V, RG=27, Starting TJ =25C ISD 5A, di/dt 180A/s, VDD BVDSS , Starting TJ =25C Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS IRLM220A Fig 2. Transfer Characteristics 11 0 11 0 Top : ID , Drain Current [A] 10 0 ID , Drain Current [A] 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 1 0 oC 5 10 0 2 oC 5 - 5 oC 5 @Nts: oe 1 V =0V . GS 2 V =4 V . DS 0 3 2 0 s P l e T s .5 us et 4 6 8 1 0 1 -1 0 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC . 5 C 1 -1 0 10 0 11 0 1 -1 0 0 2 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 20 . Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] 11 0 RDS(on) , [ ] Drain-Source On-Resistance 15 . V =5V GS 10 . 10 0 05 . V =1 V 0 GS @Nt :T =2 C oe J 5 00 . 0 3 6 9 1 2 1 5 1 8 o 1 0 oC 5 2C 5 1 -1 0 04 . 06 . 08 . 10 . 12 . o @Nts: oe 1 V =0V . GS us et 2 2 0 s P l e T s .5 14 . 16 . 18 . ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 50 0 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 6 Fig 6. Gate Charge vs. Gate-Source Voltage 40 0 C iss V =4 V 0 DS VGS , Gate-Source Voltage [V] Capacitance [pF] V =10V 0 DS V =10V 6 DS 4 30 0 20 0 C oss @Nts: oe 1 V =0V . GS 2 f=1Mz . H 2 10 0 C rss @Nts:I =5A oe D 0 0 2 4 6 8 1 0 1 2 00 1 0 1 0 1 VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] IRLM220A Fig 7. Breakdown Voltage vs. Temperature 12 . 25 . N-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 20 . BVDSS , (Normalized) 11 . 15 . 10 . 10 . @Nts: oe 1 V =5V . GS 2 I =25A .D . -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 09 . @Nts: oe 1 V =0V . GS D 05 . 2 I = 2 0 A . 5 08 . -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 00 . -5 7 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] 12 0 Fig 9. Max. Safe Operating Area Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y Fig 10. Max. Drain Current vs. Ambient Temperature 15 . ID , Drain Current [A] 10 0 1 0 s 0 1m s 1m 0s D C @Nts: oe 1 T = 2 oC .C 5 2 T =10 C .J 5 3 Snl Ple . ige us o ID , Drain Current [A] 11 0 10 . 1 -1 0 05 . 1 -2 0 1 -3 -1 0 1 0 10 0 11 0 12 0 00 . 2 5 5 0 7 5 10 0 15 2 10 5 VDS , Drain-Source Voltage [V] TA , Ambient Temperature [oC] Thermal Response 102 Fig 11. Thermal Response D=0.5 101 0.2 0.1 0.05 0.02 @ Notes : 1. Z J A (t)=62.5 o C/W Max. 2. Duty Factor, D=t1 /t2 100 0.01 single pulse 3. TJ M -TA =PD M *Z PDM t1 t2 JA (t) Z (t) , JA 10- 1 - 5 10 10- 4 10- 3 10- 2 10- 1 100 101 102 103 t 1 , Square Wave Pulse Duration [sec] N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform IRLM220A Current Regulator 50K 12V 200nF 300nF Same Type as DUT VGS Qg 5V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 5V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 5V tp ID (t) VDS (t) Time IRLM220A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD * dv/dt controlled by "RG" * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM TM EnSigna ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5 |
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