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| 2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 60V 90V RDS(ON) (max) 3.0 4.0 ID(ON) (min) 1.5A 1.5A Order Number / Package TO-39 2N6660 2N6661 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Package Options Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) DGS Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C TO-39 Case: DRAIN Note: See Package Outline section for dimensions. 7-3 2N6660/2N6661 Thermal Characteristics Package 2N6660 2N6661 ID (continuous)* 1.1A 0.9A ID (pulsed) 3A 3A Power Dissipation @ TC = 25C 6.25W 6.25W C/W 20 20 jc C/W 125 125 ja IDR* 1.1A 0.9A IDRM 3.0A 3.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current 2N6660 2N6661 Min 60 90 0.8 -3.8 2.0 -5.5 100 10 500 ID(ON) RDS(ON) ON-State Drain Current Static Drain-to-Source ON-State Resistance All 2N6660 2N6661 GFS CISS COSS CRSS t(ON) t(OFF) VSD trr Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn-OFF Time Diode Forward Voltage Drop Reverse Recovery Time 1.2 350 170 50 40 10 10 10 ns V ns VDD = 25V, ID = 1A, RGEN = 25 VGS = 0V, ISD = 1A VGS = 0V, ISD = 1A pF VGS = 0V, VDS = 24V f = 1 MHz 1.5 5.0 3.0 4.0 m A V mV/C nA A Typ Max Unit V Conditions VGS = 0V, ID = 10A VGS = VDS, ID =1mA VGS = VDS, ID =1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating, TA = 125C VGS = 10V, VDS = 10V VGS= 5V, ID = 0.3A VGS = 10V, ID = 1A VGS = 10V, ID = 1A VDS = 25V, ID = 0.5A Notes: 1: All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2: All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF PULSE GENERATOR Rgen VDD RL OUTPUT D.U.T. 10% 10% INPUT 7-4 |
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