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RF COMMUNICATIONS PRODUCTS
SA636 Low voltage high performance mixer FM IF system with high-speed RSSI
Product specification Replaces data of 1994 Jun 16 IC17 Data Handbook 1997 Nov 07
Philips Semiconductors
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
DESCRIPTION
The SA636 is a low-voltage high performance monolithic FM IF system with high-speed RSSI incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator, wideband data output and fast RSSI op amps. The SA636 is available in 20-lead SSOP (shrink small outline package). The SA636 was designed for high bandwidth portable communication applications and will function down to 2.7V. The RF section is similar to the famous SA605. The data output has a minimum bandwidth of 600kHz. This is designed to demodulate wideband data. The RSSI output is amplified. The RSSI output has access to the feedback pin. This enables the designer to adjust the level of the outputs or add filtering. SA636 incorporates a power down mode which powers down the device when Pin 8 is low. Power down logic levels are CMOS and TTL compatible with high input impedance.
PIN CONFIGURATION
DK Package
RFIN RF BYPASS XTAL OSC (EMITTER) (BASE) VCC RSSI FEEDBACK RSSIOUT POWER DOWN CONTROL DATA OUT QUADRATURE IN
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
MIXER OUT IF AMP DECOUPLING IF AMP IN IF AMP DECOUPLING IF AMP OUT GND LIMITER IN LIMITER DECOUPLING LIMITER DECOUPLING LIMITER OUT
XTAL OSC
APPLICATIONS
* DECT (Digital European Cordless Telephone) * Digital cordless telephones * Digital cellular telephones * Portable high performance communications receivers * Single conversion VHF/UHF receivers * FSK and ASK data receivers * Wireless LANs
FEATURES
SR00491
Figure 1. Pin Configuration
* XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
oscillator can be injected)
* 92dB of IF Amp/Limiter gain * 25MHz limiter small signal bandwidth * Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 90dB
* Wideband data output (600kHz min.) * Fast RSSI rise and fall times * Low power consumption: 6.5mA typ at 3V * Mixer input to >500MHz * Mixer conversion power gain of 11dB at 240MHz * Mixer noise figure of 12dB at 240MHz
* RSSI output internal op amp * Internal op amps with rail-to-rail outputs * Low external component count; suitable for crystal/ceramic/LC
filters
* Excellent sensitivity:
0.54V into 50 matching network for 12dB SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF at 240MHz and IF at 10.7MHz
* ESD hardened * 10.7MHz filter matching (330) * Power down mode (ICC = 200A)
ORDERING INFORMATION
DESCRIPTION 20-Pin Plastic Shrink Small Outline Package (Surface-mount) TEMPERATURE RANGE -40 to +85C ORDER CODE SA636DK DWG # SOT266-1
1997 Nov 07
2
853-1757 18664
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
BLOCK DIAGRAM
20 19 18 17 16 15 14 13 12 11
IF AMP MIXER
GND LIMITER
OSCILLATOR
FAST RSSI
QUAD
VCC E B RSSI
-+
PWR DWN
-+
AUDIO
1
2
3
4
5
6
7
8
9
10
SR00492
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL VCC VIN TSTG TA Single supply voltage Voltage applied to any other pin Storage temperature range Operating ambient temperature range SA636 DK package 117C/W PARAMETER RATING 0.3 to 7 -0.3 to (VCC+0.3) -65 to +150 -40 to +85 UNITS V V
C C
NOTE: JA, Thermal impedance
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25C; unless otherwise stated. LIMITS SYMBOL VCC ICC PARAMETER Power supply voltage range DC current drain Input current Input level ICC tON tOFF Standby Power up time Power down time Pin 8 = HIGH Pin 8 LOW Pin 8 HIGH Pin 8 LOW Pin 8 HIGH Pin 8 = LOW RSSI valid (10% to 90%) RSSI invalid (90% to 10%) TEST CONDITIONS MIN 2.7 5.5 -10 -10 0 0.7VCC 0.2 10 5 SA636 TYP 3.0 6.5 MAX 5.5 7.5 10 10 0.3VCC VCC 0.5 V mA A V mA s s UNITS
1997 Nov 07
3
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
AC ELECTRICAL CHARACTERISTICS
TA = 25C; VCC = +3V, unless otherwise stated. RF frequency = 240.05MHz + 14.5dBV RF input step-up; IF frequency = 10.7MHz; RF level = -45dBm; FM modulation = 1kHz with 125kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor. Test circuit Figure 1. The parameters listed below are tested using automatic test equipment to assure consistent electrical characteristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN Mixer/Osc section (ext LO = 160mVRMS) fIN fOSC Input signal frequency External oscillator (buffer) Noise figure at 240MHz Third-order input intercept point Conversion power gain RF input resistance RF input capacitance Mixer output resistance IF section IF amp gain Limiter gain Input limiting -3dB AM rejection Data level 3dB data bandwidth SINAD sensitivity THD S/N Total harmonic distortion Signal-to-noise ratio IF RSSI output with buffer IF RSSI output rise time (10kHz pulse, no 10.7MHz filter) (no RSSI bypass capacitor) IF RSSI output fall time (10kHz pulse, no 10.7MHz filter) (no RSSI bypass capacitor) RSSI range RSSI accuracy IF input impedance IF output impedance Limiter input impedance Limiter output impedance Limiter output level with no load RF/IF section (int LO) System RSSI output System SINAD RF level = -10dBm RF level = -106dBm 1.4 12 V dB No modulation for noise IF level = -118dBm IF level = -68dBm IF level = -10dBm IF frequency = 10.7MHz RF level = -56dBm RF level = -28dBm IF frequency = 10.7MHz RF level = -56dBm RF level = -28dBm 2.0 7.3 90 +1.5 330 330 330 300 130 s s dB dB mVRMS 1.2 1.1 s s 0.3 0.9 RF level = -111dBm 330 load 330 load Test at Pin 18 80% AM 1kHz RLOAD = 100k 120 600 38 54 -105 50 130 700 16 -43 60 0.2 0.6 1.3 0.5 1.0 1.8 -38 dB dB dBm dB mVRMS kHz dB dB dB V V V (Pin 20) Matched f1=240.05; f2=240.35MHz Matched 14.5dBV step-up Single-ended input 8 500 500 12 -16 11 700 3.5 330 14 MHz MHz dB dBm dB pF SA636 TYP MAX UNITS
1997 Nov 07
4
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS
9.0 8.5 8.0 7.5 7.0 6.5 VCC = 2.7V 6.0 5.5 5.0 -50 -40 -30 -20 -10 0 10 20 30 40 TEMPERATURE (C) VCC = 3V VCC = 5V 0.50 0.45 POWER DOWN SUPPLY CURRENT (mA) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (C) VCC = 2.7V VCC = 3V
SUPPLY CURRENT (mA)
VCC = 5V
50
60
70 80 90
Supply Current vs Temperature and Supply Voltage
20 19 18 17 16 MIXER GAIN (dB) 15 14 13 12 11 10 9 8 7 6 5 -40 0 25 Temperature (C) 70 85 2.7V 3.0V 5.5V RF level = -45 dBm
Power Down Supply Current vs Temperature and Supply Voltage
-5 -7 RF level = -45 dBm -9 MIXER IIP3 (deB) -11
-13 -15
5.5V 2.7V 3.0V
-17 -19 -21 -23 -25 -40 0 25 Temperature (C) 70 85
Mixer Power Gain vs Temperature and Supply Voltage
300
Mixer IIP3 at 240MHz vs Temperature and Supply Voltage
20 AUDIO 0
250 AUDIO REFERENCE (mVrms) 5.5V 200 AUDIO (dB) 3.0V 150 2.7V -40 DISTORTION -60 NOISE -20 AM REJECTION
100
-80
50
-100
12dB SINAD
0 -40 0 25 Temperature (C) 70 85
-120 -50 -40 -30 -20 -10 0 10 20 30 40 50 TEMPERATURE (C) 60 70 80 90
Audio Reference Level vs Temperature and Supply Voltage
12dB SINAD and Relative Audio, THD, Noise and AM Rejection for VCC = 3V vs Temperature RF = 240MHz, Level = -68dBm, Deviation = 125kHz
SR00493
Figure 3. Performance Characteristics
1997 Nov 07
5
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS (continued)
10 0 RELATIVE TO AUDIO OUTPUT (dB) -10 -20 -30 -40 -50 -60 -70 -80 -90 -110 -90 -80 -70 -60 -50 -40 -30 -20 -100 -10 0 RF INPUT LEVEL (dBm) NOISE THD+N 0.8 0.6 0.4 0.2 0 AM REJECTION RSSI AUDIO 2 1.8 RELATIVE TO AUDIO OUTPUT (dB) 1.6 1.4 1.3 RSSI (V) 1.0 10 0 -10 -20 AM REJECTION -30 -40 -50 -60 -70 RSSI -80 -90 -110 -90 -80 -70 -60 -50 -40 -30 -20 -100 RF INPUT LEVEL (dBm) -10 0 -15 -10 0.2 0.0 THD+N NOISE 1.2 1.0 0.8 0.6 0.4 RSSI (V) AUDIO 2.0 1.8 1.6 1.4
Receiver RF Performance -- T = 25C, Audio Level = 129mVRMS
10 AUDIO 0 RELATIVE TO AUDIO OUTPUT (dB) -10 -20 AM REJECTION -30 -40 -50 -60 -70 -80 -90 -110 -90 -80 -70 -60 -50 -40 -30 -20 -100 -10 0 THD+N NOISE RSSI 1.8 1.6 IF OUTPUT POWER (dBm) 1.4 1.2 1 0.8 0.6 0.4 -100 0.2 0 -65 -60 -110 RSSI (V) -10 -20 -30 -40 -50 -60 -70 -80 -90 2 0
Receiver RF Performance -- T = -40C, Audio Level = 118mVRMS
-55
-50
-45
-40
-35
-30
-25
-20
RF INPUT POWER (dBm)
Receiver RF Performance - T = 85C, Audio Level = 131mVRMS
85 -5 -7 -9 MIXER IIP3 (dB) 1.4 1.2 5.5V 3.0V RSSI (V) 2.7V 1 0.8 0.6 -19 0.4 -21 0.2 -23 0 -110 -11 RF level = -45 dBm 2
Mixer Third Order Intercept and Compression
-40C 1.8 1.6 25C 85C
-13 -15 -17
-90
-80
-70
-60
-50
-40
-30
-40
0
25 70 Temperature (C)
-100
RF INPUT LEVEL (dBm)
Mixer IIP3 at 240MHz vs Temperature and Supply Voltage
RSSI vs RF Input Level and Temperature
SR00494
Figure 4. Performance Characteristics
1997 Nov 07
6
-20
-25
0
-10
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS (continued)
50.00 48.00 46.00 POWER GAIN (dB) 44.00 42.00 40.00 38.00 36.00 34.00 32.00 30.00 10.00 30.00 50.00 70.00 -50.00 -30.00 -10.00 90.00 VCC = 2.7V VCC = 5V VCC = 3V POWER GAIN (dB) 65.00 63.00 61.00 59.00 57.00 55.00 53.00 51.00 49.00 47.00 45.00 10.00 30.00 50.00 70.00 -50.00 -30.00 -10.00 90.00 VCC = 2.7V VCC = 3V VCC = 5V
TEMPERATURE (C)
TEMPERATURE (C)
SA626 IF Amplifier Gain vs Temperature vs Supply Voltage
0.8 0.7 0.6 DATA LEVEL (Vp-p) 0.5 0.4 0.3 0.2 0.1 0 -40 0 25 70 Temperature (C) 85 5.5V 3.0V 2.7V 600kHz Data Rate, IF = 9.85MHz, Dev = 288kHz, RF = -40dBm
SA626 Limiting Amplifier Gain vs Temperature vs Supply Voltage
0.8 0.7 0.6 DATA LEVEL (Vp-p) 0.5 3.0V 0.4 0.3 0.2 0.1 0 -40 0 25 70 Temperature (C) 85 1kHz Data Rate, IF = 9.85MHz, Dev = 288kHz, RF = -40dBm 2.7V 5.5V
Data Level vs Temperature and Supply Voltage
Data Level vs Temperature and Supply Voltage
SR00495
Figure 5. Performance Characteristics
1997 Nov 07
7
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
PERFORMANCE CHARACTERISTICS (continued)
300 0.8 0.7 5.5V DATA LEVEL (Vp-p) 0.6 0.5 5.5V 0.4 3.0V 0.3 2.7V 0.2 0.1 0 -40 0 25 70 Temperature (C) 85 0 -40 0 25 70 Temperature (C) 85 600kHz Data Rate, IF = 9.85MHz, Dev = 288kHz, RF = -40dBm
AUDIO REFERENCE (mVrms)
250
200 3.0V 2.7V
150
100
50
Audio Reference Level vs Temperature and Supply Voltage
Data Level vs Temperature and Supply Voltage
0.8 0.7 0.6 DATA LEVEL (Vp-p) 0.5 3.0V 0.4 0.3 0.2 0.1 0 -40 0 25 70 Temperature (C) 85 2.7V 5.5V 1kHz Data Rate, IF = 9.85MHz, Dev = 288kHz, RF = -40dBm
Data Level vs Temperature and Supply Voltage Figure 6. Performance Characteristics
SR00496
1997 Nov 07
8
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
PIN FUNCTIONS
PIN PIN DC V No. MNEMONIC EQUIVALENT CIRCUIT PIN PIN DC V No. MNEMONIC EQUIVALENT CIRCUIT
VCC
RSSI 1 RF IN +1.07 6 FEEDBACK +0.20
6
--
+
0.8k 1
0.8k 2 VCC
RF 2 BYPASS +1.07 7
RSSI OUT +0.20
+ -- 7
R
XTAL 3 OSC +1.57
4
18k
POWER 8 DOWN +2.75
8
R MIX
VCC 3
XTAL 4 OSC +2.32
150A
DATA 9 OUT +1.09
+ -- 9
80k 5 VREF
QUAD. 10
BANDGAP
10
5
VCC
+3.00
IN
+3.00
20A
SR00497
Figure 7. Pin Functions 1997 Nov 07 9
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
PIN FUNCTIONS (continued)
PIN PIN DC V No. MNEMONIC EQUIVALENT CIRCUIT PIN PIN DC V No. MNEMONIC EQUIVALENT CIRCUIT
LIMITER 11 OUT +1.35
11 8.8k
IF 16 AMP OUT +1.22
140 16 8.8k
LIMITER 12 DECOUP +1.23 17
IF AMP DECOUP +1.22
14
18 330
LIMITER 13 COUPLING +1.23
IF 18
50A
AMP IN
+1.22
330
50A
12 13 19
17
LIMITER 14 IN +1.23 19
IF AMP DECOUP +1.22
MIXER 15 GND 0 20 OUT +1.03
110 20
400A
SR00498
Figure 8. Pin Functions (cont.) 1997 Nov 07 10
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
MIXER IF/LIM OUT
IF/LIM IN
R9 R4 C12 C11 L5 2 1 FLT1 1 2 C14 2 C15 1 R2 R3 C16 R5 FLT2 1 2 C18 SW5 C19 R6 R11 R7 R8 C17 C20 R10
C13
20
19
18
17
16
15
14
13
12
11
IF AMP MIXER
LIMITER
QUAD RSSI OSCILLATOR
C21
VCC
-+
PWR DWN
-+ DATA
1
C1
2
C3
3
4
C4
5
6
7
8
9
10
C6 *L1 C2 L3 C5 FLT 3
C8 R1 C9 L4
*L2
C7
FLT 4 PWR DWN CTRL DATA OUT C10
VCC RF IN LO IN
RSSI OUT
Automatic Test Circuit Component List R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 8.2k select 6.42k 347.8 49.9 1k 49.9 6.42k 347.8 49.9 1k 49.9 C1 C2 C3 C4 C5 C6 *C7 C8 C9 C10 C11 0.1F 1-5pF select for input match 0.1F 0.1F 1-5pF select for input match 100pF 6.8F 10V 1F 39pF select 0.1F 0.1F C12 160pF select C13 1000pF C14 0.1F C15 1000pF C16 0.1F C17 0.1F C18 1000pF C19 1000pF C20 0.1F C21 1pF L1 L2 L3 L4 L5 FLT1 FLT2 FLT3 FLT4 150nH select for input match 22nH select for input match 47nH select for input match 5.6H select for input match 1.27-2.25H select for mixer output match 10.7MHz (Murata SFE10.7MA5-A) 10.7MHz (Murata SFE10.7MA5-A) "C" message weighted Active de-emphasis
SR00501
*NOTE: This value can be reduced when a battery is the power source.
Figure 9. SA636 240.05MHz (RF) / 10.7MHz (IF) Test Circuit 1997 Nov 07 11
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
SMA RF IN J1 110.592MHz +/-288kHz
C1 5-30pF
L4 680nH
L1 180nH U1
C20 68pF C19 1nF
C21 330pF C18 68pF
1
C2 10nF
RF IN
MIXER OUT
20
2
RF BYPASS
IF AMP DECOUPLING 1
19
3
SMA LO IN 120.392MHz @-10dBm J2 R1 51 C4 1nF C3 1nF
XTAL OSC (EMITTER)
IF IN
18
C17 1nF
4
XTAL OSC (BASE)
IF AMP DECOUPLING 2
17
5
VCC
IF OUT
16
C16 100pF
6
R3 22k
RSSI FEEDBACK
GROUND
15
7
RSSI OUT
LIMITER IN
14
C13 100pF
R4 33k
8
PD CTRL
LIMITER DEC1
13
+3V VCC
R2 10
9
+
DATA OUT
LIMITER DEC2
12
C11 1nF C12 1nF
GND
C5 15F
C6 100nF
10
QUAD IN
LIMITER OUT
11
SA636
J3 RSSI C7 470pF C10 15pF C15 330pF C14 47pF
PWR DWN R5 1.2k DATA OUT C8 5-30pF
+ C9 82pF
L2 2.2H
L3 680nH R6 560
SR00500
Figure 10. SA636 110.592MHz (RF) / 9.8MHz (IF) DECT Application Circuit
1997 Nov 07
12
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
Table 1.
SYMBOL PG NF IIP3 RIN CIN IF section
DECT Application Circuit Electrical Characteristics
PARAMETER Conversion power gain Noise Figure at 110MHz Third order input intercept RF input resistance RF input capacitance IF amp gain Limiter amp gain Data level 3dB data bandwidth 330 load 330 load RLOAD = 3k Matched f1 = 110.592; f2 = 110.892MHz TEST CONDITIONS TYPICAL 13 12 -15 690 3.6 38 54 130 700 RF level = -10dBm RF level = -83dBm 1.4 10 UNITS dB dB dBm pF dB dB mVRMS kHz V dB
RF frequency = 110.592MHz; IF frequency = 9.8MHz; RF level = -45dBm; FM modulation = 100kHz with 288kHz peak deviation. Mixer/Osc section (ext LO = 160mVRMS)
RF/IF section (internal LO) System RSSI output System S/N1 NOTE: 1. 10dB S/N corresponds to BER = 10-3.
RF GENERATOR 110.592MHz
SA636 DEMO BOARD RSSI DATA VCC = 3V
LO / GENERATOR 120.392MHz
DC VOLTMETER
SCOPE
SPECTRUM ANALYZER
SR00502
Figure 11. SA636 Application Circuit Test Set Up NOTES: 1. RF generator: Set your RF generator at 110.592MHz, use a 100kHz modulation frequency and a 288kHz deviation. 2. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout. 3. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and design. If the lowest RSSI voltage is 500mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than expected. 4. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 0.1F bypass capacitor on the supply pin improves sensitivity.
1997 Nov 07
13
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
TOP SILK SCREEN (SSOP)
SR00503
Figure 12. SA636 Demoboard Layout (Not Actual Size) 1997 Nov 07 14
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
CIRCUIT DESCRIPTION
The SA636 is an IF signal processing system suitable for second IF or single conversion systems with input frequency as high as 1GHz. The bandwidth of the IF amplifier is about 40MHz, with 38dB of gain from a 50 source. The bandwidth of the limiter is about 28MHz with about 54dB of gain from a 50 source. However, the gain/bandwidth distribution is optimized for 10.7MHz, 330 source applications. The overall system is well-suited to battery operation as well as high performance and high quality products of all types, such as cordless and cellular hand-held phones. The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include a noise figure of 14dB, conversion gain of 11dB, and input third-order intercept of -16dBm. The oscillator will operate in excess of 1GHz in L/C tank configurations. Hartley or Colpitts circuits can be used up to 100MHz for xtal configurations. Butler oscillators are recommended for xtal configurations up to 150MHz. The output of the mixer is internally loaded with a 330 resistor permitting direct connection to a 10.7MHz ceramic filter for narrowband applications. The input resistance of the limiting IF amplifiers is also 330. With most 10.7MHz ceramic filters and many crystal filters, no impedance matching network is necessary. For applications requiring wideband IF filtering, such as DECT, external LC filters are used (see Figure 10). To achieve optimum linearity of the log signal strength indicator, there must be a 6dB(v) insertion loss between the first and second IF stages. If the IF filter
or interstage network does not cause 6dB(v) insertion loss, a fixed or variable resistor can be added between the first IF output (Pin 16) and the interstage network. The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector. One port of the Gilbert cell is internally driven by the IF. The other output of the IF is AC-coupled to a tuned quadrature network. This signal, which now has a 90 phase relationship to the internal signal, drives the other port of the multiplier cell. Overall, the IF section has a gain of 90dB. For operation at intermediate frequency at 10.7MHz. Special care must be given to layout, termination, and interstage loss to avoid instability. The demodulated output (DATA) of the quadrature is a voltage output. This output is designed to handle a minimum bandwidth of 600kHz. This is designed to demodulate wideband data, such as in DECT applications. A Receive Signal Strength Indicator (RSSI) completes the circuitry. The output range is greater than 90dB and is temperature compensated. This log signal strength indicator exceeds the criteria for AMPS or TACS cellular telephone, DECT and RCR-28 cordless telephone. This signal drives an internal op amp. The op amp is capable of rail-to-rail output. It can be used for gain, filtering, or 2nd-order temperature compensation of the RSSI, if needed. NOTE: dB(v) = 20log VOUT/VIN
1997 Nov 07
15
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
1997 Nov 07
16
Philips Semiconductors
Product specification
Low voltage high performance mixer FM IF system with high-speed RSSI
SA636
DEFINITIONS
Data Sheet Identification
Objective Specification
Product Status
Formative or in Design
Definition
This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product.
Preliminary Specification
Preproduction Product
Product Specification
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088-3409 Telephone 800-234-7381 Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. (c) Copyright Philips Electronics North America Corporation 1994 All rights reserved. Printed in U.S.A.
1997 Nov 07
17

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