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| Product Data Sheet 6 - 17 GHz Dual-Channel Power Amplifier TGA6316-EEU Key Features and Performance * * * * * * 6 to 17 GHz Frequency Range Dual Channel Power Amplifier 20.5dB Typical Gain, Single Channel 1.5:1 Typical Input SWR, 2.1:1 Typical Output SWR, Single Channel 29.5 dBm Output Power at 3 dB Gain Compression, (31dBm combined) 6.5024 x 4.8006 x 0.1016 mm (0.256 x 0.189 x 0.004 in.) Description The TriQuint TGA6316-EEU is a dual channel GaAs monolithic amplifier which operates from 6 to 17-GHz. Each channel features three-stage topology with a 1200-mm dual-gate FET distributed amplifier for the first stage, a 1200 m single gate FET second stage, and a 1900 m single gate FET third stage. The dualchannel construction is designed for off-chip combining. A single channel of the TGA6316-EEU provides 20.5-dB typical small signal gain and 29.5 dBm output power at 3 dB gain compression. The TGA6316-EEU amplifier is designed for use in wideband systems such as electronic warfare, expendable decoys and test equipment. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. Ground is provided to the circuitry through vias to the backside metallization. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGA6316-EEU TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGA6316-EEU TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGA6316-EEU TYPICAL S-PARAMETERS F re que nc y (GHz) M AG S 11 ANG() M AG S 21 ANG() M AG S 12 ANG() M AG S 22 ANG() GAIN (dB ) 6.0 6.4 6.8 7.2 7.6 8.0 8.4 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 12.4 12.8 13.2 13.6 14.0 14.4 14.8 15.2 15.6 16.0 16.4 16.8 17.2 17.6 18.0 0.34 0.33 0.29 0.24 0.19 0.14 0.08 0.02 0.07 0.16 0.23 0.28 0.29 0.27 0.23 0.19 0.16 0.15 0.14 0.16 0.16 0.19 0.21 0.22 0.20 0.16 0.08 0.04 0.15 0.26 0.27 o -162 179 162 150 138 126 117 143 -126 -140 -161 178 157 136 122 112 110 108 107 107 99 94 81 63 43 24 13 97 109 78 43 11.98 15.41 13.82 12.11 10.41 9.49 8.74 8.54 8.64 9.24 9.89 10.93 11.42 11.58 11.23 11.05 10.76 10.82 10.48 10.21 9.47 8.89 8.09 7.56 7.09 7.06 7.41 8.52 9.45 9.15 7.29 25 -60 -131 170 122 77 37 -2 -38 -77 -116 -158 158 114 71 29 -12 -54 -97 -141 177 133 92 51 11 -28 -69 -115 -174 121 58 0.004 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.002 0.002 0.000 0.001 0.001 0.001 0.001 0.000 0.002 0.001 0.000 0.001 0.000 0.001 0.002 0.001 0.001 0.001 0.000 0.000 13 146 136 127 126 135 136 126 139 119 124 81 85 30 23 -75 -142 -147 124 147 157 -121 171 -105 -120 -142 -142 -115 -174 -30 -57 0.32 0.43 0.50 0.53 0.51 0.47 0.41 0.36 0.33 0.33 0.33 0.34 0.34 0.35 0.35 0.36 0.35 0.34 0.31 0.29 0.28 0.28 0.27 0.27 0.26 0.25 0.24 0.21 0.15 0.06 0.11 -13 -57 -92 -122 -147 -171 171 156 143 130 114 97 79 61 41 21 1 -20 -37 -51 -63 -78 -91 -104 -118 -131 -144 -160 -177 -179 -84 21.6 23.8 22.8 21.7 20.3 19.5 18.8 18.6 18.7 19.3 19.9 20.8 21.2 21.3 21.0 20.9 20.6 20.7 20.4 20.2 19.5 19.0 18.2 17.6 17.0 17.0 17.4 18.6 19.5 19.2 17.3 TA = 25 C, VD = 8 V, VG2 = 1.2 V, ID = 50% IDSS (single channel) RF CHARACTERISTICS P AR AM ETER TES T C ONDITIONS TYP UNITS GP SWR(in) SWR(out) P 1dB P 2dB P 3dB Small-s ignal pow er ga in Input s tanding w ave ratio Output s tanding w ave ra tio Output pow e r a t 1-dB ga in compre s s ion Output pow e r a t 2-dB ga in compre s s ion Output pow e r a t 3-dB ga in compre s s ion f =6 to 17 GHz f = 6 to 17 GHz f = 6 to 17 GHz f = 6 to 17 GHz f = 6 to 17 GHz f = 6 to 17 GHz 20.5 1.5:1 2.1:1 28.5 29 29.5 dB dBm TA = 25oC, VD = 8 V, VG2 = 1.2 V, ID = 50% IDSS (single channel) 4 TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet TGA6316-EEU Refer to TriQuint's Recommended Assembly Instructions for GaAs Products. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGA6316-EEU TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet TGA6316-EEU GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7 Product Data Sheet TGA6316-EEU Application Notes: Balanced Configuration Utilizing Lange Couplers TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 8 Product Data Sheet TGA6316-EEU Application Notes: TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 9 Product Data Sheet TGA6316-EEU Application Notes: GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 10 |
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