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SFH 203 P SFH 203 PFA Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 203 P) und bei 880 nm (SFH 203 PFA) q Kurze Schaltzeit (typ. 5 ns) q 5 mm-Plastikbauform im LED-Gehause Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" q Schnelle Lichtschranken fur Gleich- und Features q Especially suitable for applications from 400 nm to 1100 nm (SFH 203 P) and of 880 nm (SFH 203 PFA) q Short switching time (typ. 5 ns) q 5 mm LED plastic package Applications q q q q Wechsellichtbetrieb q LWL Industrial electronics For control and drive circuits Photointerrupters Fiber optic transmission systems Typ (*vorher) Type (*formerly) SFH 203 P (*SFH 217) SFH 203 PFA (*SFH 217 F) Bestellnummer Ordering Code Q62702-P946 Q62702-P947 Semiconductor Group 1 03.96 feof6644 feo06644 SFH 203 P SFH 203 PFA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Wert Value - 55 ... + 100 300 Einheit Unit C C Top; Tstg TS VR Ptot 50 100 V mW Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K VR = 5 V, = 950 nm, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Symbol Symbol Wert Value SFH 203 P SFH 203 PFA Einheit Unit S S S max 9.5 ( 5) - 850 - 6.2 ( 3.6) 900 nA/Ix A nm nm 400 ... 1100 750 ... 1100 A LxB LxW H 1 1x1 1 1x1 mm2 mm x mm 0.4 ... 0.7 0.4 ... 0.7 mm Semiconductor Group 2 SFH 203 P SFH 203 PFA Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Halbwinkel Half angle Dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 950 nm Symbol Symbol 75 1 ( 10) 0.62 0.89 Wert Value SFH 203 P SFH 203 PFA 75 1 ( 10) 0.59 0.86 Grad deg. nA A/W Electrons Photon Einheit Unit IR S VO VO 350 ( 300) - - 300 ( 250) mV mV ISC ISC 9.3 - 5 - 3.0 5 A A ns Anstiegs- und Abfallzeit des Fotostromes tr, tf Rise and fall time of the photocurrent RL = 50 ; VR = 20 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 80 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 950 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 20 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit VF C0 TCV TCI 1.3 11 - 2.6 1.3 11 - 2.6 V pF mV/K %/K 0.18 - - 0.2 2.9 x 10- 14 W Hz cm * Hz W NEP 2.9 x 10- 14 D* 3.5 x 1012 3.5 x 1012 Semiconductor Group 3 SFH 203 P SFH 203 PFA Relative spectral sensitivity SFH 203 P Srel = f () Relative spectr. sensitivity SFH 203 PFA Srel = f () Total power dissipation Ptot = f (TA) Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) SFH 203 PFA Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) SFH 203 P Dark current IR = f (VR), E = 0 Directional characteristics Srel = f () Capacitance C = f (VR), f = 1 MHz, E = 0 Semiconductor Group 4 |
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