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Index of /ds/NP/
Name Last modified Size Description
Parent Directory NPDS402.pdf NPDS403.pdf NPDS404.pdf NPDS405.pdf NPDS5565.pdf NPDS5566.pdf NPDS5911.pdf NPDS5912.pdf NPDS8301.pdf NPDS8302.pdf NPDS8303.pdf 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 22-Dec-99 00:13 123K 123K 123K 123K 130K 130K 121K 121K 109K 109K 109K 73K
NPN_Epitaxial_Silicon+ 16-Apr-99 13:01
NPDS402 / NPDS403 / NPDS404 / NPDS406
Discrete POWER & Signal Technologies
NPDS402 NPDS403 NPDS404 NPDS406
S2 NC G2 G1 NC D2
SO-8
S1
D1
N-Channel General Purpose Dual Amplifier
Sourced from Process 98.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25C unless otherwise noted
Parameter
Value
50 50 10 -55 to +150
Units
V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
(c)1997 Fairchild Semiconductor Corporation
NPDS402 / NPDS403 / NPDS404 / NPDS406
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) VGS VG1 - G2 Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage Voltage Gate 1-Gate 2 I G = 1.0 A, VDS = 0 VGS = 30 V, VDS = 0 VDS = 15 V, ID = 1.0 nA VDG = 15 V, ID = 200 A I G = 1.0 A, VDS = 0 + / - 50 - 0.5 - 50 25 - 2.5 - 2.3 V pA V V V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 10 V, VGS = 0 0.5 10 mA
SMALL SIGNAL CHARACTERISTICS
gfs goss gos Ciss Crss CMMR VGS1 - VGS2 Common Source Forward Transconductance Common Source Output Conductance Common Source Output Conductance Input Capacitance Reverse Transfer Capacitance Common Mode Rejection Differential Match VDS = 10 V, VGS = 0, f = 1.0 kHz VDS = 15 V, ID = 200A, f = 1.0 kHz VDS = 10 V, VGS = 0, f = 1.0 kHz VDS = 15 V, ID = 200A, f = 1.0 kHz VDG = 15 V, ID = 200 A, f = 1.0 MHz VDG = 15 V, ID = 200 A, f = 1.0 MHz VDG = 10 to 20 V, ID = 200 A VDG = 10 V, ID = 200 A, NPDS402 NPDS403 NPDS404 NPDS406 VDG = 10 V, ID = 200 A, NPDS402 TA = -55 to 25 C NPDS403 NPDS404 NPDS406 VDG = 10 V, ID = 200 A NPDS402 TA = 25 to 125 C NPDS403 NPDS404 NPDS406 2000 1000 7000 2000 20 2.0 8.0 3.0 95 10 10 15 40 10 25 25 80 10 25 25 80 mhos mhos mhos mhos pF pF dB mV mV mV mV V/C V/C V/C V/C V/C V/C V/C V/C
VGS1 - VGS2
Differential Drift
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
NPDS402 / NPDS403 / NPDS404 / NPDS406
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Parameter Interactions
Common Drain-Source
Transfer Characteristics
Transfer Characteristics
Common Drain Source
Gate Leakage Current vs. Voltage
NPDS402 / NPDS403 / NPDS404 / NPDS406
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Forward Transconductance vs. Drain Current
Output Conductance vs. Drain Current
Transconductance vs. Gate Source Voltage
Transconductance vs. Gate Source Voltage
Noise Voltage vs. Frequency
Capacitance vs. Gate Source Voltage
NPDS402 / NPDS403 / NPDS404 / NPDS406
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Differential Drift
Differential Offset
CMRR vs. Drain Current
NPDS5565 / NPDS5566
Discrete POWER & Signal Technologies
NPDS5565 NPDS5566
S2 D2 NC G2 G1 NC
SO-8
S1
D1
N-Channel General Purpose Dual Amplifier
Sourced from Process 96.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ ,T stg Drain-Gate Voltage Gate-Source Voltage Gate Current
TA = 25C unless otherwise noted
Parameter
Value
40 40 10 -55 to +150
Units
V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
(c)1997 Fairchild Semiconductor Corporation
NPDS5565 / NPDS5566
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) VGS(f) VG1 - G2 Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Forward Gate-Source Voltage Voltage Gate 1 - Gate 2 I G = 1.0 A, VDS = 0 VGS = 20 V, VDS = 0 VGS = 20 V, VDS = 0, TA = 150 C VDS = 15 V, ID = 1.0 nA VDS = 0, ID = 2.0 mA VDS = 0, IG = + / - 1.0 A + / - 40 - 40 100 200 - 3.0 1.0 V pA A V V V
- 0.5
ON CHARACTERISTICS
IDSS rDS(on) Zero-Gate Voltage Drain Current* Drain-Source On Resistance VDS = 15 V, VGS = 0 I D = 1.0 mA, VGS = 0 5.0 30 100 mA
SMALL SIGNAL CHARACTERISTICS
gfs Common Source Forward Transconductance Common Source Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Short-Circuit Input Noise Voltage Noise Figure I DSS Match gfs Match Differential Match VDS = 15 V, ID = 2.0mA, f = 1.0 kHz VDS = 15 V, ID = 2.0 mA, f = 100 MHz VDS = 15 V, ID = 2.0mA, f = 1.0 kHz VDG = 15 V, ID = 2.0mA, f = 1.0MHz VDS = 15 V, ID = 2.0mA, f = 1.0 kHz VDG = 15 V, ID = 2.0 mA, f = 10 Hz VDG = 15 V, ID = 2.0 mA, f = 10 Hz RG = 1.0 m VDS = 15 V, VGS = 0 VDS = 15 V, ID = 2.0mA, f = 1.0 kHz VDG = 15 V, ID = 2.0 mA, NPDS5565 NPDS5566 VDS = 10 V, VGS = 0, f = 1.0 kHz NPDS5565 TA = 25 to 125 C NPDS5566 VDG = 15 V, ID = 2.0 mA, NPDS5565 TA = -55 to 25 C NPDS5566 7500 7000 12,500 mhos mhos mhos pF pF nV/Hz dB % % mV mV V/C V/C V/C V/C
goss Ciss Crss en NF IDSS1 - IDSS2 gfs1 - gfs2 VGS1 - VGS2 VGS1 - VGS2
45 12 3.0 50 1.0 5.0 10 10 20 25 50 25 50
Differential Drift
NPDS5565 / NPDS5566
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Parameter Interactions
Common Drain-Source
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
NPDS5565 / NPDS5566
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Leakage Current vs. Voltage
Output Conductance vs. Drain Current
Transconductance vs. Drain Current
Noise Voltage vs. Frequency
Noise Voltage vs. Current
Capacitance vs. Voltage
NPDS5565 / NPDS5566
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Differential Drift
Differential Offset
CMRR vs. Drain Current
NPDS5911 / NPDS5912
Discrete POWER & Signal Technologies
NPDS5911 NPDS5912
S2 NC G2 G1 NC D2
SO-8
S1
D1
N-Channel General Purpose Dual Amplifier
Sourced from Process 93.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25C unless otherwise noted
Parameter
Value
25 25 10 -55 to +150
Units
V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
(c)1997 Fairchild Semiconductor Corporation
NPDS5911 / NPDS5912
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) VGS VG1 - G2 Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage Voltage Gate 1 - Gate 2 I G = 1.0 A, VDS = 0 VGS = 15 V, VDS = 0 VGS = 15 V, VDS = 0, TA = 150 C VDS = 10 V, ID = 1.0 nA VDG = 10 V, ID = 5.0 mA VDS = 0, IG = + / - 1.0 A - 25 100 250 - 5.0 - 4.0 V pA nA V V V
- 1.0 - 0.3 + / - 25
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 10 V, VGS = 0 7.0 40 mA
SMALL SIGNAL CHARACTERISTICS
gfs Common Source Forward Transconductance Common Source Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Short-Circuit Input Noise Voltage Noise Figure I DSS Match gfs Match goss Match I G Match Differential Match VDS = 10 V, ID = 5.0mA, f = 1.0 kHz VDS = 10 V, ID = 5.0 mA, f = 100 MHz VDS = 10 V, ID = 5.0mA, f = 1.0 kHz VDS = 10V, ID = 5.0mA, f = 100 MHz VDG = 10 V, ID = 5.0mA, f =1.0 MHz VDS = 10 V, ID = 5.0mA, f = 1.0 kHz VDG = 10 V, ID = 5.0 mA, f = 10 kHz VDG = 10 V, ID = 5.0 mA, f = 10 kHz RG = 100 k VDS = 10 V, VGS = 0 VDS = 10 V, ID = 5.0mA, f = 1.0 kHz VDS = 10 V, ID = 5.0mA, f = 1.0 kHz VDS = 10 V, ID = 5.0mA, TA = 125C VDG = 10 V, ID = 5.0 mA, NPDS5911 NPDS5912 VDG = 10 V, VGS = 0, I D = 5.0 mA, NPDS5911 TA = 25 to 125 C NPDS5912 VDG = 10 V, ID = 5.0 mA, NPDS5911 TA = -55 to 25 C NPDS5912 5000 5000 10,000 10,000 100 150 5.0 1.2 20 1.0 5.0 5.0 20 20 10 15 20 40 20 40 mhos mhos mhos mhos pF pF nV/Hz dB % % mhos nA mV mV V/C V/C V/C V/C
goss Ciss Crss en NF IDSS1 -I DSS2 gfs1 - gfs2 goss1 -goss2 IG1 - I G2 VGS1 - VGS2 VGS1 -VGS2
Differential Drift
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
NPDS5911 / NPDS5912
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Parameter Interactions
Common Drain-Source
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
NPDS5911 / NPDS5912
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Leakage Current vs. Voltage
Output Conductance vs. Drain Current
Transconductance vs. Drain Current
Noise Voltage vs. Frequency
Capacitance vs. Voltage
Differential Drift
NPDS5911 / NPDS5912
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Differential Offset
CMRR vs. Drain Current
NPDS8301 / NPDS8302 / NPDS8303
Discrete POWER & Signal Technologies
NPDS8301 NPDS8302 NPDS8303
S2 NC G2 G1 NC D2
SO-8
S1
D1
N-Channel General Purpose Dual Amplifier
Sourced from Process 83.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ , Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25C unless otherwise noted
Parameter
Value
40 40 10 -55 to +150
Units
V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
(c)1997 Fairchild Semiconductor Corporation
NPDS8301 / NPDS8302 / NPDS8303
General Purpose Dual Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS IGSS VGS(off) VGS Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage I G = 1.0 A, VDS = 0 VGS = 20 V, VDS = 0 VDS = 20 V, ID = 1.0 nA VDS = 20 V, ID = 200 A - 0.5 - 0.3 - 40 100 - 3.5 - 3.5 V pA V V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 20 V, VGS = 0 0.5 6.0 mA
SMALL SIGNAL CHARACTERISTICS
gfs Common Source Forward Transconductance Common Source Output Conductance Common Source Output Conductance Differential Match VDS = 20 V, VGS = 0, f = 1.0 kHz VDS = 20 V, ID = 200 A, f = 1.0 kHz VDS = 20 V, ID = 200 A, f = 1.0 kHz VDS = 20 V, ID = 200 A, f = 1.0 kHz VDG = 20 V, ID = 200 A, NPDS8301 NPDS8302 NPDS8303 VDS = 20 V, ID = 200 A, NPDS8301 TA = 25 to 85 C NPDS8302 NPDS8303 1000 700 4000 1200 20 5.0 mhos mhos mhos mhos
goss gos VGS1 - VGS2
5.0 10 15 10 15 25
mV mV mV V/C V/C V/C
VGS1 - VGS2
Differential Drift
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%
Typical Characteristics
Parameter Interactions Common Drain-Source
NPDS8301 / NPDS8302 / NPDS8303
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Transfer Characteristics
Channel Resistance vs. Temperature
Leakage Current vs. Voltage
Noise Voltage vs. Frequency
Noise Voltage vs. Current
NPDS8301 / NPDS8302 / NPDS8303
General Purpose Dual Amplifier
(continued)
Typical Characteristics
(continued)
Output Conductance vs. Drain Current
Transconductance vs. Drain Current
Capacitance vs. Voltage
Differential Offset
CMRR vs. Drain Current
MJE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 I C= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
* Complement to MJE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector- Base Voltage : MJE800/801 : MJE802/803 Collector-Emitter Voltage : MJE800/801 : MJE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Symbol VCBO 60 80 VCEO 60 80 5 4 0.1 40 150 -55 ~ 150 V V V A A W C C V V Rating Unit
VEBO IC IB PC TJ T STG
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TC=25C)
Characteristic Collector Emitter Breakdown Voltage : MJE800/801 : MJE802/803 Collector Cutoff Current : MJE800/801 : MJE802/803 Collector Cutoff Current Symbol BVCEO Test Condition IC = 50mA, IB = 0 Min 60 80 ICEO VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 T C = 100C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 100 100 100 500 2 750 750 100 2.5 2.8 3 1.2 2.5 3 V V V V V V A A A A mA Max Unit V V
ICBO
Emitter Cutoff Current DC Current Gain : MJE800/802 : MJE801/803 : ALL DEVICES Collector-Emitter Saturation Voltage : MJE800/802 : MJE801/803 : ALL DEVICES Base-Emitter On Voltage : MJE800/802 : MJE801/803 : ALL DEVICES
IEBO hFE
VCE(sat)
VBE(on)
Rev. B.1
(c)1999 Fairchild Semiconductor Corporation
MJE800/801/803
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
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Full Production
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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