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Ordering number:EN6427
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
CPH5801
DC/DC Converter Applications
Features
* The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. * Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively.
Package Dimensions
unit:mm 2171
[CPH5801]
2.9 5 4 3
0.6
1 0.95
2 0.4
0.6
1.6
2.8
0.05
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Symbol Conditions
0.4
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.2
0.7
0.9
Ratings 20 10 1.4 5.6 0.9 150 -55 to +125 30 30 1 10 -55 to +125 -55 to +125
0.2
0.15
Unit V V A A W
C C
Mounted on a ceramic board (600mm2x0.8mm) 1unit
V V A A
C C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2491 No.6427-1/5
CPH5801
Electrical Characteristics at Ta = 25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance VR VF1 VF2 IR C trr Rthj-a IR=1mA IF=0.5A IF=2A VR=15V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (600mm2x0.8mm) 35 15 110 30 0.35 0.42 0.4 0.47 500 V V V A pF ns C/W V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=4V ID=400mA, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 0.4 1.8 2.5 200 260 90 60 28 10 20 20 20 6 1 2 0.9 1.2 260 360 20 10 10 1.3 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Marking : QA
Electrical Connection (Top view)
A S G
C
D
Switching Time Test Circuit [MOSFET block]
VDD=10V VIN 4V 0V VIN PW=10s D.C.1% ID=700mA RL=14.3
Reverse Recovery Time Test Circuit [SBD block]
D G
10s 50 100 10
P.G
50
CPH5801
S
--5V
100mA
trr
10mA
VOUT
Duty10%
100mA
No.6427-2/5
CPH5801
2.0 1.8 1.6
ID -- VDS
3. 0V
[MOSFET]
4.0
ID -- VGS
VDS=10V
Ta= --25 C
[MOSFET]
8.0V 6.0V
V 4.0
3.5
Drain Current, ID - A
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1
10. 0V
2.0V
Drain Current, ID - A
3.0 2.5 2.0 1.5 1.0 0.5 0
VGS=1.5V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
75
2.5
C
25 C
3.0
V 2.5
3.5 IT01075
Drain-to-Source Voltage, VDS - V
500 450
IT01074 450 400
Gate-to-Source Voltage, VGS - V
RDS(on) -- VGS
[MOSFET] Ta=25C
Static Drain-to-Source On-State Resistance, RDS (on) - m
RDS(on) -- Ta
[MOSFET]
Static Drain-to-Source On-State Resistance, RDS (on) - m
400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10
350 300 250 200 150 100 50 0 --60
700mA ID=400mA
V =2.5 , VGS A 400m I D= 4.0V S= A, VG 700m I D=
--40
--20
0
20
40
60
80
100
120 140
160
Gate-to-Source Voltage, VGS - V
10
yfs -- ID
IT01076
Ambient Temperature, Ta - C
10 7 5 3 2
IT01077
[MOSFET] VDS=10V
IF -- VSD
[MOSFET] VGS = 0
Forward Transfer Admittance, | yfs | - S
7 5
Forward Current, IF - A
3 2
= Ta
7 5 3 2
--2
C 5
C 25
1.0 7 5 3 2 0.1 7 5 3 2
1.0
75
C
0.1 0.01
0.01 7 5 3 2 0.001 0 0.3
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
Ta=7 5 25C C --25 C
0.6
0.9
1.2
1.5 IT01079
Drain Current, ID - A
1000 7 5
IT01078
Diode Forward Voltage, VSD - V
1000 7 5
SW Time -- ID
[MOSFET] VDD=10V VGS=4V
Ciss, Coss, Crss - pF
Ciss, Coss, Crss -- VDS
[MOSFET] f=1MHz
Switching Time, SW Time - ns
3 2
tr
3 2
100 7 5 3 2 10 7 5 3 2 1.0 0.1
td(off)
tf
100 7 5 3 2
Ciss Coss Crss
td(on)
10 2 3 5 7
Drain Current, ID - A
1.0
2
3
5
7
10
0
2
IT01080
Drain-to-Source Voltage, VDS - V
4
6
8
10
12
14
16
18
20
IT01081
No.6427-3/5
CPH5801
10 9
VGS -- Qg
VDS=10V ID=1.4A
[MOSFET]
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01
ASO
IDP=5.6A
10
[MOSFET] 100s
Gate-to-Source Voltage, VGS - V
1m
ms
s
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 IT01082
Drain Current, ID - A
ID=1.4A
DC
10
op era tio
0m
s
Operation in this area is limited by RDS(on).
n
Ta=25C Single pulse 1unit Mounted on a ceramic board (600mm2x0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5
Total Gate Charge, Qg - nC
1.2
0.1
Drain-to-Source Voltage, VDS - V
1.0 7
IT01083
PD -- Ta
[MOSFET]
IF -- VF
C 25
25 C
[SBD]
Allowable Power Dissipation, PD - W
1.0 0.9 0.8
5
M
Forward Current, IF - A
ou
nte
3 2
do
=1 Ta
na
ce
0.6
0.4
mm
5 3
2
0.2
m)
1u
nit
160
2 0.01
0 0 20 40 60 80 100 120 140
0
0.1
0.2
75 C
0.3
x0
.8m
50
(6
00
C
ard
7
10
ic
bo
0.1
0 C
ram
0.4
0.5 IT00627
Ambient Temperature, Ta - C
100 7 5 3 2
IT01084
Forward Voltage, VF - V
Average Forward Power Dissipation, PF(AV) -- W
1.0 0.9
IR -- VR
5C Ta=12
[SBD]
PF(AV) -- IO
Rectangular wave =60 Rectangular wave =120 Sine wave =180
[SBD]
Reverse Current, IR - mA
0.8 Rectangular wave =180 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 Sine wave 180 360 1.0 Rectangular wave 360
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 5 10
100C
75C
50C
25C
0.01 15 20 25 30 IT00628
1.2
1.4 IT00629
Reverse Voltage, VR - V
1000 7 5
Average Forward Current, IO -- A
12
C -- VR
[SBD] f=1MHz
Surge Forward Current, IS (Peak) - A
IS -- t [SBD] Current waveform : 50Hz sine wave
Is 20ms t
Interterminal Capacitance, C - pF
3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 2 3 5 IT00630
10
8
6
4
2
0
Reverse Voltage, VR - V
10
7 0.01
2
3
5
Time, t - s
7 0.1
2
3
5
7 1.0
2
3
IT00631
No.6427-4/5
CPH5801
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6427-5/5

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