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Silicon PIN Diodes
BAR 60 BAR 61
q q
RF switch RF attenuator for frequencies above 10 MHz
Type BAR 60
Marking 60
Ordering Code (tape and reel) Q62702-A786
Pin Configuration
Package1) SOT-143
BAR 61
61
Q62702-A120
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS 65 C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point
1) 2)
Symbol VR IF Ptot Tj Tstg Top
Values 100 140 250 150 - 55 ... + 150 - 55 ... + 150
Unit V mA mW C
Rth JA Rth JS

580 340
K/W
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
07.94
BAR 60 BAR 61
Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC/AC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Zero bias conductance VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Differential forward resistance f = 100 MHz, IF = 0.01 mA IF = 0.1 mA IF = 1.0 mA IF = 10 mA IR - - VF CT - - gp
L
Values typ. max.
Unit
- - -
100 1 1.25
nA
A
-
V pF
0.25 0.2 50 1
0.5 - - -
S s
- -
rf - - - - 2800 380 45 7 - - - -
Semiconductor Group
2
BAR 60 BAR 61
Forward current IF = f (VF)
Forward current IF = f (TS; TA*) *Package mounted on alumina
Forward resistance rf = f (IF) f = 100 MHz
Diode capacitance CT = f (VR)
Semiconductor Group
3
BAR 60 BAR 61
Application circuit for attenuation networks with diode BAR 60
Application circuit for attenuation networks with diode BAR 61
Semiconductor Group
4

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