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  Datasheet File OCR Text:
 (R)
BUL59
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s s
NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS
APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES
s
3 1 2
DESCRIPTION The BUL59 is manufactured using high voltage Multi Epitaxial Mesa technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value 850 400 9 8 16 4 8 90 -65 to 150 150
Unit V V V A A A A W
o o
C C
June 2001
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BUL59
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.39 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO VCEO(sus) Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage (I B = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Maximum Collector Emitter Voltage Without Snubber DC Current Gain Test Conditions V CE = rated V CES V CE = rated V CES V EB = 9 V I C = 10 mA L = 25 mH 400 T j = 125 o C Min. Typ. Max. 200 500 100 Unit A A A V
V CE(sat) V BE(sat) V CEW
IC = 2 A IC = 5 A IC = 2 A IC = 5 A I C = 15 A V BB = -2.5 V t p = 10 s IC = 2 A IC = 5 A IC = 8 A IC = 2 A V BE(off) = -5 V V CC = 250 V
I B = 0.4 A IB = 1 A I B = 0.4 A IB = 1 A R BB = 0 L = 50H V CE = 5 V V CE = 5 V V CE = 10 V I Bon = 0.4 A R BB = 0 L = 200 H 450
0.18
0.5 1.5 1.2 1.6
V V V V V
h FE
8 6 4
40 30
ts tf
INDUCTIVE LOAD Storage Time Fall Time
0.8 0.15
s s
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
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BUL59
DC Current Gain DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
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BUL59
Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit
(1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier
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BUL59
TO-220 MECHANICAL DATA
DIM. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M DIA. 3.75 13.00 2.65 15.25 6.20 3.50 2.60 3.85 0.147 mm MIN. 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10.00 16.40 14.00 2.95 15.75 6.60 3.93 0.511 0.104 0.600 0.244 0.137 0.102 0.151 TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.394 0.645 0.551 0.116 0.620 0.260 0.154 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409
P011CI
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BUL59
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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