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| (R) BAT60J SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE A 60 K DESCRIPTION Schottky barrier diode encapsulated in a SOD-323 small SMD package. This device is intended for use in portable equipments. It is suited for DC to DC converters, step-up conversion and power management. SOD-323 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL *: Parameter Repetitive peak reverse voltage Peak forward current Surge non repetitive forward current Power Dissipation Storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s = 0.11 tp=10ms Ta=25C Value 10 3 5 310 - 65 to +150 150 260 Unit V A A mW C C C dPtot 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j - a ) THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient (*) Parameter Value 400 Unit C/W (*) Mounted on epoxy board with recommended pad layout. May 2000 - Ed: 4A 1/5 BAT60J STATIC ELECTRICAL CHARACTERISTICS Symbol VF * Tests Conditions Forward voltage drop Tests conditions Tj = 25C IF = 10 mA IF = 100 mA IF = 1 A IR ** Reverse leakage current Tj = 25C Tj = 25C Tj = 80C Pulse test: * tp = 380s, < 2% ** tp = 5ms, < 2% To evaluate the conduction losses the following equation: P = 0.38 x IF(AV) + 0.17 IF2(RMS) VR = 5 V VR = 8 V VR = 8 V Min. Typ. 0.28 0.35 0.53 1 1.3 73 Max. 0.32 0.40 0.58 3 4 150 A Unit V 2/5 BAT60J Fig. 1: Average forward power dissipation versus average forward current. Fig. 2-1: Peak forward current versus ambient temperature ( = 0.11). PF(av)(W) 0.35 = 0.05 = 0.1 = 0.2 = 0.5 IF(A) 3.2 2.8 =1 0.30 0.25 0.20 0.15 2.4 2.0 1.6 1.2 0.10 0.05 IF(av) (A) 0.00 0.0 0.1 0.2 0.3 0.4 0.5 T 0.8 tp T =tp/T 0.6 0.4 0.7 0.0 0 =tp/T 25 tp Tamb(C) 50 75 100 125 150 Fig. 2-2: Average forward current versus ambient temperature ( = 0.5). Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IF(av)(A) 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 3.0 2.5 IM(A) Ta=25C 2.0 1.5 1.0 T IM Ta=50C Ta=75C 0.5 t =tp/T 0 25 tp Tamb(C) 50 75 100 125 150 =0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-3 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy printed circuit board FR4 with recommended pad layout). Fig. 5: Reverse leackage current versus reverse voltage applied (typical values). Zth(j-a)/Rth(j-a) 1E+0 = 0.5 IR(mA) 1E+1 Tj=150C = 0.2 = 0.1 1E+0 1E-1 1E-1 Tj=80C 1E-2 Single pulse 1E-2 t(s) 1E-3 1E-4 1E-3 1E-2 1E-1 1E+0 T Tj=25C 1E-3 =tp/T 1E+1 tp VR(V) 1E-4 0 1 2 3 4 5 6 7 8 9 10 1E+2 3/5 BAT60J Fig. 6: Reverse leackage current versus junction temperature (typical values). IR[Tj] / IR[Tj=25C] 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 Tj(C) 1E-1 0 25 50 75 100 125 150 10 1 VR(V) 10 VR=8V Fig. 7: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Tj=25C Fig. 8-1: Forward voltage drop versus forward current (High level). IFM(A) 1E+1 Fig. 8-2: Forward voltage drop versus forward current (Low level). IFM(A) 1.0 0.9 0.8 Tj=150C (Typical values) Tj=25C (Maximumvalues) Tj=150C (Typical values) Tj=25C (Maximum values) 0.7 0.6 Tj=80C (Typical values) 1E+0 0.5 0.4 Tj=80C (Typical values) 0.3 0.2 VFM(V) 1E-1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 0.0 0.0 0.1 0.2 0.3 0.4 VFM(V) 0.5 0.6 0.7 0.8 Fig. 9: Thermal resistance junction to ambient versus copper surface (epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 600 550 500 450 400 350 300 250 200 150 100 0 10 20 30 S(Cu) (mm ) 40 50 60 70 80 90 100 IF=0.75A 4/5 BAT60J PACKAGE MECHANICAL DATA SOD-323 DIMENSIONS H b E A1 REF. A A1 b Millimeters Min. 0 0.25 0.1 1.52 1.11 2.3 0.1 0.1 Max. 1.17 0.1 0.44 0.25 1.8 1.45 2.7 0.46 0.41 0 Inches Min. Max. 0.046 0.004 0.017 0.01 0.071 0.057 0.106 0.02 0.016 0.01 0.004 0.06 0.044 0.09 0.004 0.004 D A c D E H L c Q1 L Q1 MARKING Type BAT60J n Marking 60 Package SOD-323 Weight 0.005 g. Base qty 3000 Delivery mode Tape & reel Epoxy meets UL94V-0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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