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| FDS7764S September 2002 FDS7764S 30V N-Channel PowerTrench SyncFETTM General Description The FDS7764S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7764S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. Features * 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V RDS(ON) = 9.0 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (25 nC typical) * High performance trench technology for extremely low RDS(ON) and fast switching * High power and current handling capability Applications * DC/DC converter * Motor drives D D D D 5 6 4 3 2 1 SO8 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 16 (Note 1a) Units V V A W 13.5 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 30 C/W Package Marking and Ordering Information Device Marking FDS7764S Device FDS7764S Reel Size 13'' Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS7764S Rev D (W) FDS7764S Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = -16 V , VDS = 0 V Min Typ Max Units 30 23 500 100 -100 V mV/C A nA nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25C VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 12 A VGS = 10 V, ID=13.5A, TJ = 125C VDS = 10 V, ID = 13.5 A 0.8 1.4 -2 6 7 8 72 2 V mV/C 7.5 9 10 m gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 2800 530 195 pF pF pF f = 1.0 MHz 1.4 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 9 7 46 16 18 14 74 29 35 ns ns ns ns nC nC nC VDS = 15 V, ID = 13.5 A, VGS = 5 V 25 6 6 FDS7764S Rev D (W) FDS7764S Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 3.5 A mV ns nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 3.5 A Voltage IF = 3.5 A, Diode Reverse Recovery Time diF/dt = 300 A/s Diode Reverse Recovery Charge (Note 2) 450 25 700 (Note 2) 40 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50/W when 2 mounted on a 1in pad of 2 oz copper b) 105/W when 2 mounted on a .04 in pad of 2 oz copper c) 125/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS7764S Rev D (W) FDS7764S Typical Characteristics 50 VGS = 10V 5.0V ID, DRAIN CURRENT (A) 40 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.0V 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 3.0V 3.5V 4.5V 6.0V 10V VGS = 2.5V 2.5V 30 20 10 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.024 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 13.5A VGS =10V ID = 6.8A 0.02 1.4 1.2 0.016 TA = 125oC 0.012 1 0.8 0.008 TA = 25oC 0.6 -50 -25 0 25 50 75 o 0.004 100 125 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 50 VDS = 5V ID, DRAIN CURRENT (A) 40 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 30 TA = 125oC 20 25oC 10 -55oC 0 1 1.5 2 2.5 3 1 TA = 125oC 25oC 0.1 -55oC 0.01 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7764S Rev D (W) FDS7764S Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13.5A 8 20V 6 CAPACITANCE (pF) 4000 VDS = 10V 15V 3200 f = 1MHz VGS = 0 V CISS 2400 4 1600 COSS 800 2 CRSS 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100us P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1s 1ms 10ms 100ms 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 1 10s DC VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 20 0.1 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJC(t) = r(t) * RJC RJC = 125 C/W 0.1 0.1 0.05 P(pk 0.02 0.01 0.01 SINGLE PULSE t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS7764S Rev D (W) FDS7764S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDS7764S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 TA = 125oC 0.01 0.001 TA = 100oC Current: 0.8A/div 0.0001 TA = 25oC 0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature. Time: 12.5ns/div Figure 12. FDS7764S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6644). Current: 0.8A/div Time: 12.5ns/div Figure 13. Non-SyncFET (FDS6644) body diode reverse recovery characteristic. FDS7764S Rev D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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