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| BFP 196 NPN Silicon RF Transistor * For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA * Power amplifier for DECT and PCN systems * fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 196 RIs Q62702-F1320 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 100 12 mW 700 150 - 65 ... + 150 - 65 ... + 150 105 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 77 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFP 196 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 50 mA, VCE = 8 V Semiconductor Group 2 Dec-13-1996 BFP 196 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 5 7.5 0.97 0.3 3.7 - GHz pF 1.4 dB 1.5 2.5 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 12.5 6.5 16 10 - IC = 50 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFP 196 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.7264 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 20 1.1766 3.8128 0.88299 1 13.325 23.994 1.9775 0.73057 2.2413 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.4294 10.584 1.2907 0.75103 0.7308 0.44322 0 0.3289 0 0 0.50922 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80012 119.22 0.94288 4.8666 0.27137 0.33018 0.1 1667 0.29998 0.75 1.11 300 fA fA V fF V eV K 0.019511 A 0.084011 mA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.84 0.65 0.31 0.14 0.07 0.42 145 19 281 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-13-1996 BFP 196 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 800 mW Ptot 600 500 TS 400 300 TA 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-13-1996 BFP 196 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.8 pF 8.0 10V GHz 5V 3V 6.0 2V 5.0 Ccb 1.4 1.2 1.0 fT 4.0 0.8 3.0 0.6 0.4 0.2 0.0 0 4 8 12 16 V VR 22 2.0 1V 0.7V 1.0 0.0 0 20 40 60 80 mA IC 120 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 18 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 10 10V dB 5V 3V dB G 10V 14 5V 3V 2V 12 G 8 2V 7 6 5 1V 4 10 1V 3 0.7V 2 8 0.7V 6 0 20 40 60 80 mA IC 120 1 0 0 20 40 60 80 mA IC 120 Semiconductor Group 6 Dec-13-1996 BFP 196 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 18 VCE = Parameter, f = 900MHz 36 IC=50mA dB 0.9GHz dBm 8V 32 G 14 12 10 8 6 4 2 0 0 2 4 6 8 V 1.8GHz 0.9GHz IP3 30 28 3V 26 1.8GHz 24 2V 22 20 18 16 14 12 12 0 \undefined &SYMBOPL.VCE\ 20 40 60 80 100 1V 5V mA 130 IC Power Gain Gma, Gms = f(f) VCE = Parameter 32 Power Gain |S21|2= f(f) VCE = Parameter 32 IC=50mA dB dB IC=50mA G 24 S21 24 20 20 16 16 12 12 8 8 10V 2V 1V 0.7V 4 0 -4 0.0 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 4 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-13-1996 |
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