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| NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages in VHF equipment. Features: D Specified 175MHz, 28V Characteristics: Output Power: 2.5W Minimum Gain: 10dB Efficiency: 50% Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 V(BR)EBO IE = 0.1mA, IC = 0 ICEO ICEX Emitter Cutoff Current IEBO VCE = 30V, IB = 0 VCE = 30V, VBE(off) = 1.5V, TC = +200C VCE = 65V, VBE(off) = 1.5V VBE = 4V, IC = 0 40 4 - - - - - - - - - - - - 0.1 5.0 1.0 0.1 V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed thru a 25mH inductor. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage Dynamic Characteristics Current Gain - Bandwidth Product Output Capacitance Functional Tests Power Input Common-Emitter Amplifier Power Gain Collector Efficiency Pin Gpe VCE = 28V, Pout = 2.5W, f = 175MHz - 10 50 - - - 0.25 - - W dB % fT Cob IC = 100mA, VCE = 28V, f = 100MHz VCB = 30V, IE = 0, f = 100kHz - - 500 8.0 - 10.0 MHz pF hFE VCE(sat) IC = 250mA, VCE = 5V IC = 250mA, IB = 50mA 10 - - - - 1.0 V Symbol Test Conditions Min Typ Max Unit .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45 .031 (.793) |
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