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| NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching ZTX360 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 60 40 5 1 500 E-Line TO92 Compatible VALUE UNIT V V V A W C -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Sustaining Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Turn-On Time Turn-Off Time SYMBOL VCEO(SUS) ICBO VCE(sat) VBE(sat) hFE fT Cib Cob ton toff 0.7 25 200 36 5.75 50 10 40 75 MIN. 40 500 300 0.6 1.2 150 MHz pF pF ns ns TYP. MAX. UNIT V nA CONDITIONS. IC=10mA, IB=0* VCB=40V, IE=0 VCB=40V, IE=0, Tamb=150C IC=500mA, IB=50mA* IC=500mA, IB=50mA* IC=500mA, VCE=1V* IC=50mA, VCE=10V, f=100MHz VEB=0.5V, IC=0, f=1MHz VCB=10V, IE=0, f=1MHz VCC=30V, IC=500mA, =50mA, -VBE(off) =2V IB(on) VCC=30V, IC=500mA, =-I =50mA IB(on) B(off) A V V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-166 |
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