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| MITSUBISHI THYRISTOR MODULES TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H * IT (AV) * VRRM Average on-state current .......... 400A Repetitive peak reverse voltage ........ 400/800/1200/1600V * VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V * DOUBLE ARMS * Insulated Type (DZ Type) APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM (DZ) CR1 K1 K2 G2 K2 Dimensions in mm K2 G2 A2 CR2 K1 G1 A1 K1 K2 A2 A1 60 50 36 16 26 36 G1 K1 (CZ) 3-6.5 CR1 A1 K1 K2 CR2 A2 K1 G1 K2 G2 24 23 35 24 44 24 35 800.2 180 24 26 4-M8 800.2 (PZ) CR1 Tab#110, t=0.5 9 A1 K1 K2 CR2 K2 G2 A2 K1 G1 LABEL 36 50 (UZ) CR1 K2 G2 A2 K1 K2 CR2 K1 G1 9 (DZ Type) A1 (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 24 1200 1350 960 1200 1350 960 2H 1600 1700 1280 1600 1700 1280 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Ratings 620 Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g Single-phase, half-wave 180 conduction, TC=66C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125C 400 8000 2.7 x 105 200 10 3.0 10 5.0 4.0 -40~+125 -40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 1100 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=1200A, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case, per 1/2 module Case to fin, conductive grease applied, per 1/2 module Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- 500 -- 0.25 15 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 60 60 1.4 -- 3.0 -- 100 0.1 0.05 -- Unit mA mA V V/s V V mA C/ W C/ W M Feb.1999 MITSUBISHI THYRISTOR MODULES TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.6 SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 10 4 7 Tj=125C 5 3 2 10000 8000 6000 4000 2000 1.0 1.4 1.8 2.2 2.6 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.10 TRANSIENT THERMAL IMPEDANCE (C/W) GATE CHARACTERISTICS 4 3 2 GATE VOLTAGE (V) VFGM=10V VGT=3.0V PG(AV)= 3.0W 10 1 7 5 3 2 PGM=10W 0.08 0.06 10 0 7 5 IGT= 100mA 3 2 10 -1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) Tj=25C 0.04 0.02 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) 500 AVERAGE ON-STATE POWER DISSIPATION (W) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 120 180 CASE TEMPERATURE (C) 130 120 110 100 90 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 400 360 RESISTIVE, INDUCTIVE LOAD =30 90 60 360 RESISTIVE, INDUCTIVE LOAD 300 200 PER SINGLE ELEMENT 100 80 PER SINGLE ELEMENT 70 60 50 0 =30 60 90 120 180 0 0 50 100 150 200 250 300 350 400 AVERAGE ON-STATE CURRENT (A) 100 200 300 400 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM400DZ/CZ/PZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE 800 AVERAGE ON-STATE POWER DISSIPATION (W) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 600 =30 CASE TEMPERATURE (C) 270 DC 180 120 60 90 130 120 110 100 90 80 70 60 50 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) PER SINGLE ELEMENT 360 RESISTIVE, INDUCTIVE LOAD 400 200 PER SINGLE ELEMENT 0 0 200 360 RESISTIVE, INDUCTIVE LOAD 600 DC =30 60 90 0 200 120 180 400 270 600 400 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 |
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