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| VUC 25 Three Phase Rectifier Bridge with Fast Diodes and "Softstart" Thyristor IdAVM = 28 A ITAVM = 26 A VRRM = 1200-1600 V 3 5 6 4 7 8 VRSM VDSM V 1300 1500 1700 VRRM VDRM V 1200 1400 1600 Type 4 2 1 6 7 1 2 VUC 25-12go2 VUC 25-14go2 VUC 25-16go2 3 5 8 Symbol IdAV IdAVM ITAVM IFSM, ITSM Test Conditions TK = 85C; module module TK = 85C; (DC) TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings Diode Thyristor 25 28 300 330 270 300 450 460 365 380 26 330 370 300 330 545 575 450 460 150 A A A A A A A A2s A2s As A2s A/ms 2 Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Fast recovery diodes to reduce EMI Separate thyristor for softstart Solderable terminals UL registered E 72873 q q q q q q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications Input rectifier for switching power supplies (SMPS) Softstart capacitor charging Electric drives and auxiliaries q q q q q q (di/dt)cr TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = ITAVM diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tp = 30 ms tp = 10 ms 500 200 10 10 1 0.5 A/ms V/ms q Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Up to 10 dB lower EMI/RFI compared to standard rectifier (dv/dt)cr VRGM PGM PGAVM TVJ TVJM Tstg VISOL Md Weight Dimensions in mm (1 mm = 0.0394") V W W W C C C V~ V~ Nm lb.in. g -40...+125 125 -40...+125 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 28 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 VUC 25 Symbol IR, ID VF, VT VT0 rT VGT IGT VGD IGD IL IH tgd tq trr RthJC RthJH dS dA a Test Conditions VR = VRRM; VD = VDRM TVJ = TVJM TVJ = 25C Characteristic Values Diode Thyristor 5 0.3 2.2 1.2 18 5 0.3 1.5 mA mA V IF = 55 A; IT = 45 A, TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = TVJM; TVJ = 25C TVJ = 25C VD = 2/3 VDRM VD = 2/3 VDRM 1.1 V 11 mW 1.5 80 0.2 5 300 100 2.5 V mA V mA mA mA ms ms ms K/W K/W K/W K/W TVJ = 25C; tG = 30 ms IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 125C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM TVJ = 25C; IF = 10 A; -di/dt = 10 A/ms, VR = 1/2 VRRM per thyristor (diode); DC current per module per thyristor (diode); DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration 1.5 2.3 0.38 2.9 0.48 typ. 130 0.9 1.1 - 7 mm 7 mm 50 m/s2 (c) 2000 IXYS All rights reserved 2-2 |
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