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| VN05H HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN05H s V DSS 60 V R DS(on ) 0.18 I OUT 12 A V CC 36 V s s s s s OUTPUT CURRENT (CONTINUOUS): 12A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION PENTAWATT (vertical) PENTAWATT (horizontal) DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. BLOCK DIAGRAM PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN050H PENTAWATT horizontal VN050H(011Y) PENTAWATT in-line VN050H(012Y) July 1998 1/10 VN05H ABSOLUTE MAXIMUM RATING Symbol V (BR)DSS I OUT IR I IN VCC VCC -V CC I STAT V ESD P tot Tj T stg ESB Parameter Drain-Source Breakdown Voltage Output Current (cont.) Reverse Output Current Input Current Supply Voltage (continuous) Supply Voltage (pulsed) Reverse Supply Voltage Status Current Electrostatic Discharge (1.5 k, 100 pF) Power Dissipation at T c 25 o C Junction Operating Temperature Storage Temperature Power Mos Avalanche Energy Value 60 12 -12 10 40 60 -4 10 2000 52 -40 to 150 -55 to 150 350 Unit V A A mA V V V mA V W o o C C mJ CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/10 VN05H THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.4 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 Tj 125 oC unless otherwise specified) POWER Symbol VCC R on IS Parameter Supply Voltage On State Resistance Supply Current Test Conditions see note 1 I OUT = 6 A I OUT = 6 A Off State On State T j = 25 o C T j 25 C o Min. 5.5 Typ. 13 Max. 36 0.18 0.36 50 15 Unit V A mA SWITCHING Symbol t d(on) tr t d(off) tf (di/dt) on (di/dt) off V demag Parameter Turn-on Delay Time Of Output Current Rise Time Of Output Current Turn-off Delay Time Of Output Current Fall Time Of Output Current Turn-on Current Slope Turn-off Current Slope Inductive Load Clamp Voltage Test Conditions I OUT = 6 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 6 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 6 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 6 A Resistive Load Input Rise Time < 0.1 s T j = 25 o C I OUT = 6 A I OUT = IOV I OUT = 6 A I OUT = IOV I OUT = 6 A 25 T j 140 o C 25 T j 140 o C L = 1 mH -7 -4 Min. Typ. 15 30 20 10 0.5 2 2 4 -2 Max. Unit s s s s A/s A/s A/s A/s V LOGIC INPUT Symbol V IL VIH V I(hyst.) I IN V ICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input Current Input Clamp Voltage V IN = 5 V I IN = 10 mA I IN = -10 mA 6 -0.7 2 0.5 50 Test Conditions Min. Typ. Max. 0.8 (*) Unit V V V A V V 3/10 VN05H ELECTRICAL CHARACTERISTICS (Continued) PROTECTION AND DIAGNOSTICS Symbol V STAT (*) V USD V SCL (*) I OV I AV I OL T TSD TR Parameter Status Voltage Output Low Under Voltage Shut Down Status Clamp Voltage Over Current Average Current in Short Circuit Open Load Current Level Termal Shut-Down Temperature Reset Temperature I STAT = 10 mA I STAT = -10 mA R LOAD < 10 m R LOAD < 10 m T c = 85 C 5 140 125 o Test Conditions I STAT = 1.6 mA Min. Typ. Max. 0.4 5.5 Unit v V V V 6 -0.7 20 1.4 180 A A mA o C C o (*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (*) Status determinaion > 100 s after the switching edge. Note 1: Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. 4/10 VN05H TRUTH TABLE INPUT Normal Operation Open Circuit (No Load) Over-temperature Under-voltage L H L H L H X X OUTPUT L H L H L L L L DIAGNOSTIC H H H L H L H H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/10 VN05H Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/10 VN05H PENTAWATT (VERTICAL) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia mm TYP. inch TYP. MIN. 2.4 1.2 0.35 0.8 1 3.2 6.6 10.05 3.4 6.8 MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 MIN. 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.396 0.134 0.268 MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 17.85 15.75 21.4 22.5 2.6 15.1 6 4.5 4 3.65 3.85 0.144 3 15.8 6.6 0.102 0.594 0.236 0.703 0.620 0.843 0.886 0.118 0.622 0.260 0.177 0.157 0.152 P010E 7/10 VN05H PENTAWATT (HORIZONTAL) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 Dia 10.05 14.2 5.7 14.6 3.5 2.6 15.1 6 3.65 2.4 1.2 0.35 0.8 1 3.2 6.6 3.4 6.8 mm MIN. TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 15 6.2 15.2 4.1 3 15.8 6.6 3.85 0.137 0.102 0.594 0.236 0.144 0.396 0.559 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.590 0244 0.598 0.161 0.118 0.622 0.260 0.152 P010F 8/10 VN05H PENTAWATT (IN-LINE) MECHANICAL DATA DIM. MIN A C D D1 E F F1 G G1 H2 H3 L2 L3 L5 L6 L7 Diam. 10.05 23.05 25.3 2.6 15.1 6 3.65 23.4 25.65 2.4 1.2 0.35 0.8 1 3.2 6.6 3.4 6.8 mm TYP MAX 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 23.8 26.1 3 15.8 6.6 3.85 0.396 0.907 0.996 0.102 0.594 0.236 0.144 0.921 1.010 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MIN inch TYP MAX 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.937 1.028 0.118 0.622 0.260 0.152 P010D 9/10 VN05H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 10/10 |
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