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| TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V (D-S) MOSFETs PRODUCT SUMMARY Part Number TN0201L TN0401L VN0300L VN0300LS V(BR)DSS Min (V) 20 40 30 30 rDS(on) Max (W) 1.2 @ VGS = 10 V 1.2 @ VGS = 10 V 1.2 @ VGS = 10 V 1.2 @ VGS = 10 V VGS(th) (V) 0.5 to 2 0.5 to 2 0.8 to 2.5 0.8 to 2.5 ID (A) 0.64 0.64 0.64 0.67 FEATURES D D D D D Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-226AA (TO-92) S 1 Device Marking Front View TO-92S (Copper Lead Frame) S 1 Device Marking Front View TN0201L "S" TN 0201L xxyy VN0300LS "S" VN 0300LS xxyy G 2 G 2 TN0401L D 3 "S" TN 0401L xxyy "S" = Siliconix Logo xxyy = Date Code D 3 Top View TN0201L TN0401L VN0300L VN0300L "S" VN 0300L xxyy Top View VN0300LS "S" = Siliconix Logo xxyy = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70199 S-04279--Rev. E, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TN0201L 20 "20 0.64 0.38 1.5 0.8 0.32 156 TN0401L 40 "20 0.64 0.38 1.5 0.8 0.32 156 VN0300L 30 "30 0.64 0.38 3 0.8 0.32 156 VN0300LS 30 "30 0.67 0.43 3 0.9 0.4 156 Unit V A W _C/W _C -55 to 150 11-1 TN0201L/0401L, VN0300L/LS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN0201L TN0401L VN0300L VN0300LS Parameter Static Symbol Test Conditions Typa Min Max Min Max Unit TN0201L Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V ID = 10 mA TN0401L 55 55 20 40 30 V VDS = VGS, ID = 0.25 mA Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "30 V VDS = 30 V, VGS = 0 V TJ = 125_C Zero Gate Voltage Drain Current IDSS VDS = 0.8 x V(BR)DSS, VGS = 0 V TJ = 125_C On-State Drain Currentb VDS = 10 V, VGS = 4.5 V ID(on) VDS = 10 V, VGS = 10 V VGS = 3.5 V, ID = 0.05 A VGS = 5 V, ID = 0.3 A Drain-Source On-Resistanceb VGS = 4.5 V, ID = 0.25 A rDS(on) TJ = 125_C VGS = 10 V, ID = 1 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 1.4 1.5 0.5 2 0.8 "10 "100 10 500 1 100 mA m nA 2.5 0.9 3.5 1.8 1.2 1.4 2.6 0.85 1.6 500 0.25 1 4 3.3 2 4 1.2 1.2 2.4 200 200 mS W 1 A Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 38 33 8 60 50 15 100 95 25 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 15 V, RL = 14 W ID ^ 1 A, VGEN = 10 V RG = 25 W 10 13 30 30 30 ns 30 VNDQ03 Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70199 S-04279--Rev. E, 16-Jul-01 TN0201L/0401L, VN0300L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 VGS = 10 V 1.6 ID - Drain Current (mA) ID - Drain Current (A) 7V 200 6V 160 Output Characteristics for Low Gate Drive 10 V 2.9 V 2.7 V 1.2 5V 120 2.5 V 80 2.3 V 40 0.8 4V 0.4 3V 2V 2.1 V 1.7 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics 500 TJ = -55_C 3 rDS(on) - On-Resistance ( ) 400 ID - Drain Current (mA) VDS = 15 V 300 125_C On-Resistance vs. Gate-to-Source Voltage I D = 0.2 A 2 0.5 A 200 1.0 A 1 100 25_C 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 2.5 rDS(on) - Drain-Source On-Resistance ( ) rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25 2.00 1.75 1.50 Normalized On-Resistance vs. Junction Temperature VGS = 10 V I D = 0.5 A 2.0 VGS = 4.5 V 1.5 6V 0.1 A 1.25 1.00 0.75 0.50 1.0 10 V 0.5 0 0 1 2 3 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70199 S-04279--Rev. E, 16-Jul-01 www.vishay.com 11-3 TN0201L/0401L, VN0300L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 10 V 100 TJ = 150_C ID - Drain Current (mA) 1 100_C 25_C 0.1 C - Capacitance (pF) 80 VGS = 0 V f = MHz 120 Capacitance 60 40 C iss C oss C rss 20 -55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge 6 ID =1A VGS - Gate-to-Source Voltage (V) 5 t - Switching Time (ns) VDS = 15 V 4 100 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V 3 24 V 2 10 td(on) tr td(off) tf 1 0 0 80 160 240 320 400 Qg - Total Gate Charge (pC) 1 0.1 1 ID - Drain Current (A) 10 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 0.5 1 5 10 50 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 500 1K 5K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70199 S-04279--Rev. E, 16-Jul-01 |
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