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| NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 JUNE 94 FEATURES * 160 Volt VCEO * 1 Amp continuous current * Gain of 5K at IC=1 Amp * Ptot= 1 Watt ZTX600 ZTX601 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX600 160 140 10 4 1 1 5.7 E-Line TO92 Compatible ZTX601 180 160 UNIT V V V A A W mW/ C C Operating and Storage Temperature Range -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL 160 140 10 0.01 10 IEBO ICES VCE(sat) VBE(sat) VBE(on) 0.75 0.85 1.7 1.5 0.1 10 1.1 1.2 1.9 1.7 3-206 0.75 0.85 1.7 1.5 ZTX600 MIN. TYP. Collector-Base V(BR)CBO Breakdown Voltage Collector-Emitter V(BR)CEO Breakdown Voltage Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off Current ICBO 180 160 10 ZTX601 MAX. MIN. TYP. MAX. V V V A A A A A A A UNIT CONDITIONS. IC=100A IC=10mA* IE=100A VCB=140V VCB=160V VCB=140V,T==100C VCB=160V,T==100C VEB=8V VCES=140V VCES=160V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* 0.01 10 0.1 Emitter Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage 10 1.1 1.2 1.9 1.7 V V V V ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL hFE ZTX600 ZTX601 MIN. TYP. Static Forward Current Transfer Ratio Group A Group B Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff R5 = 50K UNIT CONDITIONS. IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* MHz IC=100mA, VCE=10V f=20MHz VEB=0.5V, f=1MHz VCE=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA MAX. MIN. TYP. 1K 100K 2K 1K MAX. 100K 1K 2K 1K 1K 2K 1K 5K 10K 5K 150 2K 5K 3K 10K 20K 10K 250 60 10 0.75 2.2 20K 1K 2K 1K 2K 5K 3K 10K 20K 10K 250 60 10 0.75 2.2 20K 100K 5K 100K 10K 5K 150 90 15 90 15 pF pF s s *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Maximum Power Dissipation (W) 1.0 R5 = 5K 0.8 R5 = 1M R5 = 0.6 0.4 0.2 0 1 10 100 200 DC Conditions VCE - Collector-Emitter Voltage (Volts) Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation T amb (max ) = Power (max ) - Power (act) 0.0057 +25 C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-207 ZTX600 ZTX601 TYPICAL CHARACTERISTICS 20k 1.00 16k Group B VCE=10V VCE(sat) - (Volts) IC/IB=100 0.80 hFE - Gain 0.90 12k 8k Group A 0.70 4k 0.60 0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.8 1.5 VBE(sat) - (Volts) VBE - (Volts) 1.6 1.4 VCE=5V 1.3 1.4 IC/IB=100 1.2 1.2 1.0 0.01 0.1 1 10 1.1 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC Single Pulse Test at Tamb=25C 10 ZTX600 VBE(on) v IC ZTX601 IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.001 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-208 |
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