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| Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0635, -0636 Features * Cascadable 50 Gain Block * Low Operating Voltage: 3.5 V Typical Vd * 3 dB Bandwidth: DC to 0.9 GHz * High Gain: 19.0 dB Typical at 0.5 GHz * Low Noise Figure: 2.8 dB Typical at 0.5 GHz * Cost Effective Ceramic Microstrip Package designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0636. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0635 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.5 V 2 5965-9585E 6-370 MSA-0635, -0636 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 50 mA 200 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,5]: jc = 155C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.5 mW/C for TC > 169C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 16 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 1.5 GHz f = 0.1 to 1.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 2.5 GHz Units dB dB GHz Min. 19.0 Typ. 20.5 0.7 0.9 1.4:1 1.3:1 Max. 22.0 1.0 dB dBm dBm psec V mV/C 3.1 2.8 2.0 14.5 200 3.5 -8.0 4.0 3.9 Note: 1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current is on the following page. 6-371 MSA-0635, -0636 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 16 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Note: .03 .02 .02 .02 .02 .04 .07 .10 .17 .24 .31 .37 .42 .46 .48 .52 -178 -177 -164 -116 -100 -89 -96 -108 -134 -160 -178 166 151 139 126 110 20.5 20.3 20.0 19.6 19.2 18.7 17.7 16.6 14.2 12.1 10.3 8.7 7.4 6.2 5.1 4.2 10.59 10.31 9.96 9.55 9.08 8.59 7.66 6.79 5.13 4.01 3.26 2.72 2.33 2.04 1.81 1.62 171 161 152 144 136 128 115 103 79 60 48 34 21 9 -3 -15 -23.4 -22.9 -22.4 -22.0 -21.8 -21.3 -20.2 -19.4 -17.2 -15.8 -15.1 -14.4 -13.9 -13.3 -12.8 -12.2 .068 .071 .076 .079 .081 .086 .098 .107 .138 .163 .175 .190 .203 .216 .229 .245 5 8 14 19 21 24 29 31 30 26 27 24 19 16 12 8 .04 .05 .06 .07 .09 .09 .10 .11 .12 .12 .12 .11 .10 .08 .08 .09 -44 -68 -87 -104 -114 -123 -140 -156 172 148 140 135 144 167 -173 -173 1.05 1.04 1.04 1.03 1.04 1.04 1.03 1.02 1.03 1.04 1.08 1.10 1.11 1.11 1.11 1.09 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 21 Gain Flat to DC 18 15 G p (dB) Id (mA) G p (dB) 25 TC = +125C TC = +25C 20 TC = -55C 25 0.1 GHz 0.5 GHz 20 1.0 GHz 15 2.0 GHz 10 12 9 6 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 15 10 5 0 0 1 2 3 Vd (V) 4 5 5 0 10 15 20 25 30 I d (mA) Figure 1. Typical Power Gain vs. Frequency, Id = 16 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 21 Gp (dB) 12 I d = 30 mA 8 P1 dB (dBm) 4.0 20 19 18 17 5 5 NF P1 dB 4 NF (dB) 3.5 NF (dB) GP 4 I d = 20 mA 3.0 P1 dB (dBm) 4 3 2 1 0 -55 -25 +25 +85 3 2 1 0 I d = 16 mA 0 I d = 12 mA -4 0.1 2.5 I d = 12 mA I d = 16 mA, 30 mA I d = 20 mA 0.1 0.2 0.3 0.5 1.0 2.0 4.0 2.0 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) +125 TEMPERATURE (C) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 0.5 GHz, Id=16mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-372 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS 3 .020 .508 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 1 .057 .010 1.45 .25 .100 2.54 .022 .56 .455 .030 11.54 .75 .006 .002 .15 .05 A06 RF INPUT 6-373 |
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