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| ZTX753DCSM MECHANICAL DATA Dimensions in mm (inches) PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 1.40 0.15 (0.055 0.006) FEATURES * DUAL SILICON PLANAR PNP 4.32 0.13 (0.170 0.005) 2.54 0.13 (0.10 0.005) 2 1 3 4 5 TRANSISTORS * HERMETIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS * SPACE QUALITY LEVEL OPTIONS A 6 0.23 rad. (0.009) 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) A= LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 ABSOLUTE MAXIMUM RATINGS PER SIDE (TC = 25C unless otherwise stated) VCBO VCEO VEBO ICM IC PTOT TjTSTG R qJ-A Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation @ Tamb = 25C Derate above 25C Operating And Storage Temperature Range Junction - Ambient Thermal Resistance -120V -100V -5V -6A -2A 1W 8mW/C -55 to 150C 125C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 Issue 3 ZTX753DCSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Cut-off Current Emitter Cut-off Current Test Conditions IC = 100mA IE = -100mA VCB = -100V T = 100C VEB = -4V IC = -500mA IB = -50mA* IB = -100mA* IB = -200mA* IB = -100mA* VCE = -2V* VCE = -2V* VCE = 2V* VCE = -2V* VCE = -2V* Min. -120 -100 -5 Typ. Max. Unit V -0.1 -10 -0.1 mA Collector - Emitter Breakdown Voltage IC = 10mA -0.2 -0.35 -0.8 -1.0 -0.95 70 100 55 25 200 200 110 55 -0.3 -0.5 -1.0 -1.3 -1.2 300 V Collector - Emitter Saturation Voltage IC = -1A IC = -2A Base - Emitter Saturation Voltage Base - Emitter Turn-On Voltage IC = -1A IC = -1A IC = -50mA IC = -500mA IC = -1A IC = -2A HFE DC Current Gain -- * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS Parameter fT Cobo Ton Toff Transition Frequency Output Capacitance Switching Times Switching Times (TA = 25C unless otherwise stated) Test Conditions IC = -100mA VCB = -10V VCE = -5V f = 1.0MHz f = 100MHz Min. 100 Typ. 140 Max. Unit MHz 30 pF ns IC = -500mA VCC = 10V IB1=IB2=50mA 40 600 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 Issue 3 |
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