| PART |
Description |
Maker |
| AWB7122P8 AWB7122P7 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| AWB7127HM41P8 |
2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| MAMDCC0002 MAMDCC0002TR MAMDCC0002-DC000 |
Vector Modulator, 1.805 to 1.88 GHz (DCS) and 1.93 to 1.99 GHz (PCS)
|
M/A-COM Technology Solutions, Inc.
|
| AWB7032 AWB7032P8 AWB7032P7 AWB7032P9 |
2.30 to 2.40 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions Inc.
|
| SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
| BMOD0058E016 BMOD0058E016B02 |
16V SMALL CELL MODULE
|
Maxwell Technologies
|
| IRL530 IRL530A |
RES 0R .1W 1% MF 805 CHP
Advanced Power MOSFET
|
Fairchild Semiconductor Corporation
|
| TC0276A |
SAW Resonator 368.805 MHz SMD 5X5 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
