| PART |
Description |
Maker |
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
| OP-27EP OP-27GZ OP-27 OP-27AJ OP-27AZ OP-27BJ OP-2 |
LOW NOISE, PRECISION OPERATIONAL AMPLIFIER 低噪声，高精度运算放大器
Low Noise, Precision Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 200 uV OFFSET-MAX, 8 MHz BAND WIDTH, PQCC20
Low Noise, Precision Operational Amplifier; Package: ROUND HEADER/METAL CAN; No of Pins: 8; Temperature Range: Military OP-AMP, 60 uV OFFSET-MAX, 8 MHz BAND WIDTH, MBCY8
4" CONN,COMP.,EMT,DC 低噪声，高精度运算放大器
LOW NOISE PRECISION OPERATIONAL AMPLIFIER
|
Analog Devices, Inc.
Linear Technology, Corp.
AD[Analog Devices]
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| OP-470GP OP-470GS OP-470ATC_883 OP-470 OP-470ARC_8 |
VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER 极低噪声四运算放大器
VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER QUAD OP-AMP, 600 uV OFFSET-MAX, 6 MHz BAND WIDTH, CQCC28
|
Analog Devices, Inc.
AD[Analog Devices]
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| RFDA0056R13 |
Digital Controlled Variable Gain Amplifier 300MHz to 1100MHz, 6-Bit 0.5dB LSB Control
|
RF Micro Devices
|
| SP8715 SP8715IGMPAC SP8715IGMPAS |
1100MHz Very Low Current Multi-Modulus Divider
|
Mitel Semiconductor
Mitel Networks Corporation
|
| NTE2403 NTE2402 |
Silicon complementary PNP transistor. Low noise, UNF/VNF amplifier.
Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier
Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier
|
NTE[NTE Electronics]
|
| IDT70914S25PI IDT70914S25PB IDT70914S25P 70914_DS_ |
Low-Noise JFET-Input Operational Amplifier 14-PDIP 0 to 70 高6KK的9）同步双端口RAM
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CFP -55 to 125 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125 4K X 9 MULTI-PORT SRAM, 25 ns, PQCC68
High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
HIGH SPEED 36K (4K X 9) SYNCHRONOUS DUAL-PORT RAM
From old datasheet system
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| SP8715 323 |
1100MHz Very Low Current Multi-Modulus Divider
From old datasheet system
|
Zarlink
|
