| PART |
Description |
Maker |
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| UPA1951 UPA1951TE UPA1951TE-T2 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement type MOS FET
|
NEC Corp.
|
| UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1912TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1915TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| RTF011P02 |
2.5V Drive Pch MOS FET
|
Rohm
|
| QS5U23 |
2.5V Drive Pch SBD MOS FET
|
Rohm
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
