PART |
Description |
Maker |
TSM4NB65CH TSM4NB65CI TSM4NB65CP TSM4NB65CZ |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
BZW04-9V4B BZW04-7V8B BZW04-7V0B |
Discrete Devices -Diode-TVS
|
Taiwan Semiconductor
|
MBRS15H45CT |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
MBRS25H45CT |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
MBRF20150CT-Y MBRF20200CT-Y MBRF2060CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
S1GM |
Discrete Devices -Diode-Standard Rectifier
|
Taiwan Semiconductor
|
UGF1004G UGF1005G UGF1006G UGF1007G |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
ESH2B |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 800V 3A Ultra-Fast Discrete Diode in a SMC package 400V 3A Ultra-Fast Discrete Diode in a SMC package 600V 3A Ultra-Fast Discrete Diode in a SMC package 100V 3A Ultra-Fast Discrete Diode in a SMC package 200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp. IRF[International Rectifier] VISHAY SEMICONDUCTORS
|
IDT61298S25TC IDT61298S25TCB IDT61298S25L28B IDT61 |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM x4 SRAM x4的SRAM
|
STMicroelectronics N.V. Unisonic Technologies Co., Ltd. HIROSE ELECTRIC Co., Ltd. TE Connectivity, Ltd.
|
BZT52B9V1-G BZT52B8V2-G BZT52B6V8-G BZT52B33-G BZT |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|