| PART |
Description |
Maker |
| TSM7N90CI TSM7N90CZ |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM070N07PQ56 |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| TSM4NB65CH TSM4NB65CI TSM4NB65CP TSM4NB65CZ |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
| SR815 |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| TPD6V8LP-7B |
Discrete - Protection Devices - Zener TVSs
|
Diodes
|
| DUP412VP5-7 |
Discrete - Protection Devices - Zener TVSs
|
Diodes
|
| UGF12J |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| ESH2BA |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| 3DD101B 3DD101E |
(3DD101A - 3DD101E) Discrete semiconductor devices power transistor
|
SJ
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| BZT52B9V1-G BZT52B8V2-G BZT52B6V8-G BZT52B33-G BZT |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
